Document
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
SCHEMATIC
PACKAGE OUTLINE
1
6
2
5
6 6 1 H11AV1S-M, H11AV2S-M 1 H11AV1-M, H11AV2-M
PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 3 NC 4
6 1 H11AV1A-M, H11AV2A-M
DESCRIPTION
The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line white package.
FEATURES
• H11AV1 and H11AV2 feature 0.3" input-output lead spacing • H11AV1A and H11AV2A feature 0.4" input-output lead spacing • UL recognized (File #E90700, Vol. 2) • VDE recognized (File #102497) - Add option V (e.g., H11AV1AV-M)
APPLICATIONS
• Power supply regulators • Digital logic inputs • Microprocessor inputs
© 2003 Fairchild Semiconductor Corporation
Page 1 of 10
6/30/03
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter TOTAL DEVICE Storage Temperature Operating Temperature Wave solder temperature (see page 9 for reflow solder profiles) Total Device Power Dissipation @ TA = 25°C Derate above 25°C EMITTER DC/Average Forward Input Current Reverse Input Voltage LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Detector Power Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VECO PD 70 70 7 150 1.76 V V V mW mW/°C IF VR PD 60 6 120 1.41 mA V mW mW/°C TSTG TOPR TSOL PD -40 to +150 -40 to +100 260 for 10 sec 250 2.94 °C °C °C mW mW/°C Symbol Value Units
© 2003 Fairchild Semiconductor Corporation
Page 2 of 10
6/30/03
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter EMITTER Input Forward Voltage (IF = 10 mA) TA = 25°C TA = -55°C TA = 100°C Reverse Leakage Current DETECTOR Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current Collector-Base Dark Current Capacitance (IC = 1.0 mA, IF = 0) (IC = 100 µA, IF = 0) (IE = 100 µA, IF = 0) (VCE = 10 V, IF = 0) (VCB = 10 V) (VCE = 0 V, f = 1 MHz) BVCEO BVCBO BVECO ICEO ICBO CCE 70 70 7 100 120 10 1 0.5 8 50 V V V nA nA pF (VR = 6.0 V) IR VF 0.8 0.9 0.7 1.18 1.28 1.05 1.5 1.7 1.4 10 µA V Test Conditions Symbol Min Typ* Max Unit
ISOLATION CHARACTERISTICS
Characteristic Input-Output Isolation Voltage Isolation Resistance Isolation Capacitance Note * Typical values at TA = 25°C Test Conditions Symbol (f = 60 Hz, t = 1 sec) (VI-O = 500 VDC) (VI-O = 0 V, f = 1 MHz) VISO RISO CISO Min 7500 1011 0.2 2 Typ* Max Units Vac(pk) Ω pF
© 2003 Fairchild Semiconductor Corporation
Page 3 of 10
6/30/03
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
DC Characteristic Current Transfer Ratio, Collector to Emitter Collector-Emitter Saturation Voltage AC Characteristic Non-Saturated Turn-on Time Non Saturated Turn-off Time (IC = 2 mA, VCC = 10 V, RL = 100Ω) (Fig. 11) (IC = 2 mA, VCC = 10 V, RL = 100Ω) (Fig. 11) TON TON All 15 µs Test Conditions Symbol Device H11AV1 H11AV1A H11AV2 H11AV2A All Min 100 50 0.4 V Typ* Max 300 Unit %
(IF = 10 mA, VCE = 10 V)
CTR
(IC = 2 mA, IF = 20 mA)
VCE (SAT)
All
15
µs
* Typical values at TA = 25°C
© 2003 Fairchild Semiconductor Corporation
Page 4 of 10
6/30/03
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
TYPICAL PERFORMANCE CURVES
Fig. 1 LED Forward Voltage vs. Forward Current
1.8 1.6 VCE = 5.0V TA = 25°C Normalized to IF = 10 mA
Fig. 2 Normalized CTR vs. Forward Current
1.7
1.4
VF - FORWARD VOLTAGE (V)
1.6
1.2
NORMALIZED CTR
1.5
1.0
1.4
TA = -55°C
0.8
1.3 TA = 25°C 1.2 TA = 100°C
0.6
0.4
1.1
0.2
1.0 1 10 100
0.0 0 2 4 6 8 10 12 14 16 18 20
IF - LED FORWARD CURRENT (mA)
IF - FORWARD CURRENT (mA)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.4 1.0
Fig. 4 CTR vs. RBE (Unsaturated)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
0.9 0.8
IF = 20 mA IF = 10 mA
1.2 IF = 5 mA
0.7 IF = 5 mA 0.6 0.5 0.4 0.3 0.2 VCE= 5.0 V 0.1 0.0
NORMALIZED CTR
1.0 IF = 10 mA 0.8
0.6
IF = 20 mA
0.4
Normalized to IF = 10 mA TA = 25°C
0.2 -60 -40 -20 0 20 40 60 80 100 10 100 1000
TA - AMBIENT TEMPERATURE (°C)
RBE- BASE RESISTANCE (kΩ)
1.0
VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V)
Fig. 5 CTR vs. RBE (Saturated)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
100
0.9 VCE= 0.3 V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 10 100 1000 IF = 5 mA IF = 10 mA IF = 20 mA
TA = 25˚C 10
1 IF = 2.5 mA 0.1
0.01 IF = 5 mA IF = 10 mA
IF = 20 mA
RBE- BASE RESISTANCE (k Ω)
0.001 0.01
0.1
1
10
IC - COLLECTOR CURRENT (mA)
© 2003 Fairchild Semiconductor Corporation
Page 5 of 10
6/30/03
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M
H11AV1A-M
H11AV.