ICE10N73
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems
Product Summary
ID V(BR)DSS rDS(ON)
Qg
TA = 25°C ID = 250uA VGS = 10V VDS = 480V
10A 730V 0.25Ω 82nC
Pin Description:
TO-220
G
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol Parameter
Value
Unit Conditions
ID ID, pulse
EAS IAR dv/dt
Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness
VGS
Ptot Tj, Tstg
Gate Source Voltage
Power Dissipation Operating and Storage Temperature Mounting Torque
10 35 280 7.5 50
±20 ±30
208
-55 to +150 60
A A mJ A V/ns
V
W °C Ncm
TC = 25°C TC = 25°C ID = 7.5A Limited by Tjmax VDS = 480V, ID = 10A, Tj = 125°C Static AC (f>Hz) TC = 25°C
M 3 & 3.5 screws
Max Min Typ Typ
D
S
Symbol Parameter
Values Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case
- - 0.6
RthJA Thermal Resistance, Junction to Ambient
- - 62
Tsold Soldering Temperature, Wave Soldering Only Al- - - 260 lowed At Leads
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS VGS(th) IDSS
Drain to Source Breakdown Voltage Gate Threshold Voltage
Zero Gate Voltage Drain Current
730 760 2.5 3 - 0.5 - 20
3.5 5 -
IGSS RDS(on)
Gate Source Leakage Current Drain to Source On-State Resistance
- - 100 - 0.25 0.35 - 0.7 -
RGS Gate Resistance
-4-
°C/W °C
Leaded 1.6mm (0.063in.) from Case for 10s
V VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA
µA VDS = 730V, VGS = 0V, Tj = 25°C VDS = 730V, VGS = 0V, Tj = 150°C
nA VGS = ±20v, VDS = 0V Ω VGS = 10V, ID = 5A, Tj = 25°C
VGS = 10V, ID = 5A, Tj = 150°C Ω f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email:
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ICE10N73
Symbol Parameter
Dynamic Characteristics
Ciss Coss Crss gfs td(on) Tr td(off ) tf
Input Capacitance Output Capacitance Reverse Transfer Capacitance Transconductance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Gate Charge Characteristics
Qgs Qgd Qg Vplateau
Gate to Source Charge Gate to Drain Charge Gate Charge Total Gate Plateau Voltage
Reverse Diode
VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irm Peak Reverse Recovery Current
Values Min Typ Max
Unit Conditions
- 2650 - 943 -8- 20 - 10 -5- 67 - 4.5 -
pF VGS = 0V, VDS = 25V, f = 1 MHz S VDS = >2*ID* RDS, ID = 5A
nS
VDS = 380V, VGS = 10V, ID = 10A, RG = 4Ω (External)
- 16 - 30 - 82 -5-
nC VDS = 480V, ID = 10A, VGS = 10V
V
- 1.0 1.2 - 423 -8- 34 -
V VGS = 0V, IS = IF ns
µC VRR = 480V, IS = IF, diF/dt = 100 A/µS A
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email:
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ID - Drain Current (A) ID - Drain Current (A)
ICE10N73
35 30 25
20 15
10 5 0
0
Output Characteristics VGS = 10V to 7V
6V
5V
5 10 15 VDS - Drain to Source Voltage (V)
20
35 30 25 20 15 10 5 00
Transfer Characterstics
TJ = 150°C
25°C
2 46
8
VGS - Gate to Source Voltage (V)
10
RDS(on) - On State Resistance (mΩ) VGS - Gate to Source Voltage (V)
RDS(on) - On State Resistance (Normalized)
500 450 400 350 300 250 200 150
100 50 0
0
On State Resistance vs Drain Current
VGS = 10V
5 10 15 20 25 30 35 ID - Drain Current (A)
On Resistance vs Junction Temperature 4.0
3.5 3.0 VGS = 10V
ID = 5A 2.5
2.0
1.5 1.0
0.5
0.0 -50 -25
0 25 50 75 100 125 150 TJ - Junction Temperature (°C)
10 9 8 7 6 5
4
3
2 1 0
0
Gate Charge VDS = 480V
ID = 10A
20 40 60 Qg - Total Gate Charge (nC)
80
100
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email:
[email protected] 3
ICE10N73
VGS(th) - Gate Threshold Voltage (Normalized)
Gate Threshold Voltage vs. Junction Temperature 1.4
1.3
1.2
1.1 1.0 ID = 250µA
0.9
0.8 0.7 0.6
0.5
0-.540 -25
0 25 50 75 100 125 150 TJ - Junction Temperature (°C)
C - Capacitance (pF)
100000 10000 1000 100 10 10
Capacitance Ciss
Coss
Crss
100 200 300 400 500 VDS- Drain to Source Voltage (V)
600
V(BR)DSS - Drain to Source Breakdown Voltage (Normalized)
Drain to Source Breakdown Voltage vs. Junction Temperature 1.2
1.1 ID = 1mA
1.0
Maximum Rate Forward Biased Safe Operating Area
100 10
Single Pulse Tc = 25°C T = 150°C VGS = 10V
10us
100us
1ms 1
DC
ID - Drain Current (A)
0.9 0.8
-50 -25
0.1 RPaDSck(OaNg) LeimLimit it
Thermal Limit
0 25 50 75 100 125 150 TJ - Junction Temperature (°C)
0.01 1
10 100 VDS- Drain to Source Voltage (V)
r(t) - Transit Thermal Resistance (Normalized)
Transient Thermal Response - Junction to Case 1.00
0.5
0.2 0.1 0.10 0.05 0.02
0.01 Single Pulse
Notes: PDM
0.00 1..