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ICE10N73 Dataheets PDF



Part Number ICE10N73
Manufacturers Micross Components
Logo Micross Components
Description N-Channel Enhancement Mode MOSFET
Datasheet ICE10N73 DatasheetICE10N73 Datasheet (PDF)

ICE10N73 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 10A 730V 0.25Ω 82nC Pin Description: TO-220 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Paramet.

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ICE10N73 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 10A 730V 0.25Ω 82nC Pin Description: TO-220 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Temperature Mounting Torque 10 35 280 7.5 50 ±20 ±30 208 -55 to +150 60 A A mJ A V/ns V W °C Ncm TC = 25°C TC = 25°C ID = 7.5A Limited by Tjmax VDS = 480V, ID = 10A, Tj = 125°C Static AC (f>Hz) TC = 25°C M 3 & 3.5 screws Max Min Typ Typ D S Symbol Parameter Values Min Typ Max Unit Conditions Thermal Characteristics RthJC Thermal Resistance, Junction to Case - - 0.6 RthJA Thermal Resistance, Junction to Ambient - - 62 Tsold Soldering Temperature, Wave Soldering Only Al- - - 260 lowed At Leads Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified Static Characteristics V(BR)DSS VGS(th) IDSS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current 730 760 2.5 3 - 0.5 - 20 3.5 5 - IGSS RDS(on) Gate Source Leakage Current Drain to Source On-State Resistance - - 100 - 0.25 0.35 - 0.7 - RGS Gate Resistance -4- °C/W °C Leaded 1.6mm (0.063in.) from Case for 10s V VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA µA VDS = 730V, VGS = 0V, Tj = 25°C VDS = 730V, VGS = 0V, Tj = 150°C nA VGS = ±20v, VDS = 0V Ω VGS = 10V, ID = 5A, Tj = 25°C VGS = 10V, ID = 5A, Tj = 150°C Ω f = 1 MHz, open drain Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 1 ICE10N73 Symbol Parameter Dynamic Characteristics Ciss Coss Crss gfs td(on) Tr td(off ) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Transconductance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Gate Charge Characteristics Qgs Qgd Qg Vplateau Gate to Source Charge Gate to Drain Charge Gate Charge Total Gate Plateau Voltage Reverse Diode VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irm Peak Reverse Recovery Current Values Min Typ Max Unit Conditions - 2650 - 943 -8- 20 - 10 -5- 67 - 4.5 - pF VGS = 0V, VDS = 25V, f = 1 MHz S VDS = >2*ID* RDS, ID = 5A nS VDS = 380V, VGS = 10V, ID = 10A, RG = 4Ω (External) - 16 - 30 - 82 -5- nC VDS = 480V, ID = 10A, VGS = 10V V - 1.0 1.2 - 423 -8- 34 - V VGS = 0V, IS = IF ns µC VRR = 480V, IS = IF, diF/dt = 100 A/µS A Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 2 ID - Drain Current (A) ID - Drain Current (A) ICE10N73 35 30 25 20 15 10 5 0 0 Output Characteristics VGS = 10V to 7V 6V 5V 5 10 15 VDS - Drain to Source Voltage (V) 20 35 30 25 20 15 10 5 00 Transfer Characterstics TJ = 150°C 25°C 2 46 8 VGS - Gate to Source Voltage (V) 10 RDS(on) - On State Resistance (mΩ) VGS - Gate to Source Voltage (V) RDS(on) - On State Resistance (Normalized) 500 450 400 350 300 250 200 150 100 50 0 0 On State Resistance vs Drain Current VGS = 10V 5 10 15 20 25 30 35 ID - Drain Current (A) On Resistance vs Junction Temperature 4.0 3.5 3.0 VGS = 10V ID = 5A 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) 10 9 8 7 6 5 4 3 2 1 0 0 Gate Charge VDS = 480V ID = 10A 20 40 60 Qg - Total Gate Charge (nC) 80 100 Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 3 ICE10N73 VGS(th) - Gate Threshold Voltage (Normalized) Gate Threshold Voltage vs. Junction Temperature 1.4 1.3 1.2 1.1 1.0 ID = 250µA 0.9 0.8 0.7 0.6 0.5 0-.540 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) C - Capacitance (pF) 100000 10000 1000 100 10 10 Capacitance Ciss Coss Crss 100 200 300 400 500 VDS- Drain to Source Voltage (V) 600 V(BR)DSS - Drain to Source Breakdown Voltage (Normalized) Drain to Source Breakdown Voltage vs. Junction Temperature 1.2 1.1 ID = 1mA 1.0 Maximum Rate Forward Biased Safe Operating Area 100 10 Single Pulse Tc = 25°C T = 150°C VGS = 10V 10us 100us 1ms 1 DC ID - Drain Current (A) 0.9 0.8 -50 -25 0.1 RPaDSck(OaNg) LeimLimit it Thermal Limit 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) 0.01 1 10 100 VDS- Drain to Source Voltage (V) r(t) - Transit Thermal Resistance (Normalized) Transient Thermal Response - Junction to Case 1.00 0.5 0.2 0.1 0.10 0.05 0.02 0.01 Single Pulse Notes: PDM 0.00 1..


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