ICE10N65

ICE10N65 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 9.5A 650V 0.35Ω 41nC Pin Description: TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Temperature Mounting Torque 9.5 28.5 340 5 50 ±20 ±30 95 -55 to +150 60 A A mJ A V/ns V W °C Ncm TC = 25°C TC = 25°C ID = 8.3A Limited by Tjmax VDS = 480V, ID = 9.5A, Tj = 125°C Static AC (f>Hz) TC = 25°C M 2.5 screws Symbol Parameter Values Min Typ Max Unit Conditions Thermal Characteristics RthJC Thermal Resistance, Junction to Case RthJA Thermal Resistance, Junction to Ambient Tsold Soldering Temperature, Wave Soldering Only Allowed At Leads - - 1.3 - - 62 - - 260 Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified Static Characteristics V(BR)DSS VGS(th) IDSS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current 650 675 2.1 3 3.9 - 0.1 1 ...