N-CHANNEL ENHANCEMENT MODE MOSFET
A D VNA EN CWEPDRNIOENDFWUOPCRRTMOADTUI COTN
DMN31D5UFZ
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30...
Description
A D VNA EN CWEPDRNIOENDFWUOPCRRTMOADTUI COTN
DMN31D5UFZ
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(ON) max
1.5Ω @ VGS = 4.5V 2.0Ω @ VGS = 2.5V 3.0Ω @ VGS = 1.8V 4.5Ω @ VGS = 1.5V
ID max TA = +25°C
0.22A
Description
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch Power Management Functions Analog Switch
Features and Benefits
Low Package Profile, 0.42mm Maximum Package Height 0.62mm x 0.62mm Package Footprint Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: X2-DFN0606-3 Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe
Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (approximate)
ESD PROTECTED
Bottom View
Equivalent Circuit
Top View Package Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number DMN31D5UFZ-7B
Case X2-DFN0606-3
Packaging 10K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html...
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