K1834

Power F-MOS FETs 2SK1834 Silicon N-Channel Power F-MOS s Features q Avalanche energy capability guaranteed : EAS > 15mJ q VGSS=±30V guaranteed q High-speed switching : tf = 25ns q No secondary breakdown s Applications q Non-contact relay q Solenoid drive q Motor drive q Control equipment q Switching mode regulator s Absolute Maximum Ratings (Tc = 25˚C) Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse Avalanche energy capability Allowable power dissipation TC= 25˚C Ta= 25˚C Channel temperature Storage temperature * L= 7.5mH, IL=2A, VDD= 50V, 1 pulse Symbol VDSS VGSS ID IDP EAS * PD Tch Tstg Rating 800 ±30 ±2 ±4 15 40 2 150 –55 to +150 Unit V V A A mJ W ˚C ˚C s Electrical Characteristics (Tc = 25˚C) Parameter Drain-Source cut-off current Gate-Source leakage current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON-resistance Forward transadmittance Diode forward voltage Input capacitance Output capacitance Feedback capacitance Turn-on time Fall time Turn-off time (delay time) Channel-Case heat resistance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Ciss Coss Crss ton tf td(off) Rth(ch-c) Condition VDS= 640V, VGS= 0 VGS=±30V, VDS= 0 ID=1mA, VDS= 0 VDS=25V, ID=1mA VGS=10V, ID=1A VDS= 25V, ID=1A IDR= 2A, VGS= 0 VDS= 20V, VGS= 0, f=1MHz VGS=10V, ID=1A VDD=200V, RL=200Ω 14.0±0.5 Solder Dip 4.0 16.7±0.3 7.5±0.2 0.7±0.1 2SK1834 10.0±0.2 5.5±0.2 Unit : mm 4.2±0.2 2.7±0.2 4.2±0.2 ø3.1±0.1 1.3±0.2 1.4...