IRL3302

PRELIMINARY l Advanced Process Technology l Optimized for 4.5V Gate Drive l Ideal for CPU Core DC-DC Converters l 150°C Operating Temperature l Fast Switching Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS VGSM EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage (Start Up Transient, tp = 100µs) Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RqJC RqCS RqJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient G PD 9.1696A IRL3302 HEXFET® Power MOSFET D VDSS = 20V RDS(on) = 0.020W ID = 39A S TO-220AB Max. 39 25 160 57 0.45...