D1323

Power Transistors 2SD1323 Silicon NPN triple diffusion planar type Darlington For midium speed power switching s Features 0.7±0.1 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 4.2±0.2 q Incorporating a zener diode of 30V zener voltage between collector and base q Minimized variation in the breakdown voltage q Large energy handling capability q High-speed switching q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit 14.0±0.5 Solder Dip 4.0 16.7±0.3 7.5±0.2 φ3.1±0.1 1.3±0.2 1.4±0.1 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg 30±5 30±5 5 8 4 40 2 150 –55 to +150 s Electrical Characteristics (TC=25˚C) V V V A A W ˚C ˚C 5.08±0.5 123 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) Internal Connection C B E Parameter Symbol Conditions min typ max Unit Collector cutoff current Emitter cutoff current ICBO IEBO VCB = 25V, IE = 0 VEB = 5V, IC = 0 100 µA 2 mA Collector to emitter voltage Forward current transfer ratio VCEO hFE1 hFE2*1 IC = 5mA, IB = 0 VCE = 3V, IC = 0.5A VCE = 3V, IC = 3A 25 1000 2000 35 V 10000 Collector to emitter saturation voltage VCE(sat) Base to emitter saturation voltage VBE(sat) IC = 3A, IB =...