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PFF13N50

500V N-Channel MOSFET

Description

Feb 2009 PFP13N50/PFF13N50 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 28 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.46 Ω (Typ.) @VGS=10V APPLICATION Electronic lamp ballasts based on half bridge ...

Power Device

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