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SGA4186Z Dataheets PDF



Part Number SGA4186Z
Manufacturers RFMD
Logo RFMD
Description CASCADABLE SiGe HBT MMIC AMPLIFIER
Datasheet SGA4186Z DatasheetSGA4186Z Datasheet (PDF)

SGA4186ZDC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier SGA4186Z DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The SGA4186Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression.

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SGA4186ZDC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier SGA4186Z DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The SGA4186Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain (dB) Return Loss (dB) Gain & Return Loss vs. Frequency V = 3.2 V, I = 45 mA (Typ.) DD 16 12 GAIN 8 IRL 4 ORL 0 01234 Frequency (GHz) 0 -10 -20 -30 -40 5 TL=+25ºC Features  Broadband Operation: DC to 5000 MHz  Cascadable 50Ω  Operates from Single Supply  Low Thermal Resistance Package Applications  PA Driver Amplifier  Cellular, PCS, GSM, UMTS  IF Amplifier  Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 9.0 10.0 11.0 dB 850MHz 9.2 dB 1950MHz 8.9 dB 2400MHz Output Power at 1dB Compression 14.6 dBm 850 MHz 12.4 dBm 1950 MHz Output Third Intercept Point 28.3 dBm 850 MHz 25.5 dBm 1950 MHz Bandwidth Determined by Return Loss 5000 MHz >10dB Input Return Loss 20.3 dB 1950MHz Output Return Loss 24.4 dB 1950MHz Noise Figure 5.0 dB 1950MHz Device Operating Voltage 2.9 3.2 3.5 V Device Operating Current 41 45 49 mA Thermal Resistance (Junction - Lead) 97 °C/W Test Conditions: VS=8V, ID=45mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS=110Ω, TL=25°C, ZS=ZL=50Ω DS100916 RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 6 SGA4186Z Absolute Maximum Ratings Parameter Rating Unit Max Device Current (ID) 90 mA Max Device Voltage (VD) 5V Max RF Input Power +18 dBm Max Junction Temp (TJ) +150 °C Operating Temp Range (TL) -40 to +85 °C Max Storage Temp +150 °C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD<(TJ-TL)/RTH, j-l Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Typical Performance at Key Operating Frequencies Parameter Unit 100 500 850 1950 2400 MHz MHz MHz MHz MHz Small Signal Gain dB 10.5 10.4 10.0 9.2 8.9 Output Third Order Intercept Point dBm 29.3 28.3 25.5 24.1 Output Power at 1dB Compression dBm 13.6 14.6 12.4 11.3 Input Return Loss dB 23.6 25.6 16.2 20.3 22.7 Output Return Loss dB 15.6 20.4 14.8 24.4 24.1 Reverse Isolation dB 15.8 16.0 16.5 17.9 18.2 Noise Figure dB 4.6 4.7 5.0 5.3 Test Conditions: VS=8V, ID=45mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS=110Ω, TL=25°C, ZS=ZL=50Ω 3500 MHz 8.1 11.7 21.7 19.2 OIP3 (dBm) P1dB (dBm) OIP vs. Frequency 3 VD=3.2 V, ID= 45 mA (Typ.) 35 P vs. Frequency 1dB VD= 3.2 V, ID= 45 mA (Typ.) 18 30 15 25 12 20 TL=+25ºC 15 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) 9 TL=+25ºC 6 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) Noise Figure vs. Frequency VD= 3.2 V, ID= 45 mA (Typ.) 7 6 Noise Figure (dB) 5 4 3 TL=+25ºC 2 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) 2 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 · Fo.


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