SGA4186ZDC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier
SGA4186Z
DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER
Package: SOT-86
Product Description
The SGA4186Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.
Optimum Technology Matching® Applied
GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS
SiGe HBT
GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS
Gain (dB) Return Loss (dB)
Gain & Return Loss vs. Frequency
V = 3.2 V, I = 45 mA (Typ.) DD
16
12 GAIN
8 IRL
4
ORL
0
01234 Frequency (GHz)
0 -10 -20 -30 -40 5 TL=+25ºC
Features
Broadband Operation: DC to 5000 MHz
Cascadable 50Ω Operates from Single Supply Low Thermal Resistance
Package
Applications
PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite
Parameter
Specification Min. Typ. Max.
Unit
Condition
Small Signal Gain
9.0
10.0
11.0 dB 850MHz
9.2 dB 1950MHz
8.9 dB 2400MHz
Output Power at 1dB Compression
14.6
dBm
850 MHz
12.4
dBm
1950 MHz
Output Third Intercept Point
28.3
dBm
850 MHz
25.5
dBm
1950 MHz
Bandwidth Determined by Return Loss
5000
MHz >10dB
Input Return Loss
20.3
dB 1950MHz
Output Return Loss
24.4 dB 1950MHz
Noise Figure
5.0 dB 1950MHz
Device Operating Voltage
2.9 3.2 3.5 V
Device Operating Current
41 45 49 mA
Thermal Resistance (Junction - Lead)
97 °C/W
Test Conditions: VS=8V, ID=45mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS=110Ω, TL=25°C, ZS=ZL=50Ω
DS100916
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or
[email protected].
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SGA4186Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)
90 mA
Max Device Voltage (VD)
5V
Max RF Input Power
+18 dBm
Max Junction Temp (TJ)
+150
°C
Operating Temp Range (TL)
-40 to +85
°C
Max Storage Temp
+150
°C
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression: IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Typical Performance at Key Operating Frequencies
Parameter
Unit 100 500 850 1950 2400
MHz MHz MHz MHz MHz
Small Signal Gain
dB
10.5 10.4 10.0
9.2
8.9
Output Third Order Intercept Point
dBm
29.3
28.3
25.5
24.1
Output Power at 1dB Compression
dBm
13.6
14.6
12.4
11.3
Input Return Loss
dB
23.6
25.6
16.2
20.3
22.7
Output Return Loss
dB 15.6 20.4 14.8 24.4 24.1
Reverse Isolation
dB 15.8 16.0 16.5 17.9 18.2
Noise Figure
dB 4.6 4.7 5.0 5.3
Test Conditions: VS=8V, ID=45mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS=110Ω, TL=25°C, ZS=ZL=50Ω
3500 MHz
8.1
11.7 21.7 19.2
OIP3 (dBm) P1dB (dBm)
OIP vs. Frequency 3
VD=3.2 V, ID= 45 mA (Typ.) 35
P vs. Frequency 1dB
VD= 3.2 V, ID= 45 mA (Typ.) 18
30 15
25 12
20
TL=+25ºC 15
0 0.5 1 1.5 2 2.5 3 Frequency (GHz)
9
TL=+25ºC 6
0 0.5 1 1.5 2 2.5 3 Frequency (GHz)
Noise Figure vs. Frequency VD= 3.2 V, ID= 45 mA (Typ.)
7
6
Noise Figure (dB)
5
4
3
TL=+25ºC
2
0 0.5 1 1.5 2 2.5 3 Frequency (GHz)
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7628 Thorndike Road, Greensboro, NC 27409-9421 · Fo.