2N2270

2N2270 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2270 is a NPN silicon transistor, mounted in a hermetically sealed package, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCER Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJA Thermal Resistance ΘJC 60 60 45 7.0 1.0 1.0 5.0 -65 to +200 175 35 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=60V ICBO VCB=60V, (TC=150°C) IEBO VEB=5.0V BVCBO IC=100μA 60 BVCER IC=100mA, RBE=10Ω 60 BVCEO IC=100mA 45 BVEBO IE=100μA 7.0 VCE(SAT) IC=150mA, IB=15mA VBE(SAT) IC=150mA, IB=...