2N2102

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N2102 TO-39 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Emitter Voltage, RBE < 10Ω Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCER VCBO VEBO IC PD PD Tj, Tstg VALUE 65 80 120 7.0 1.0 1.0 5.71 5.0 28.6 - 65 to +200 THERMAL RESISTANCE Junction to Ambient in free air Junction to Case **Rth (j-a) Rth (j-c) 175 35 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCER IC=1mA, RBE=10 Ω Collector Emitter Voltage VCEO IC=1mA, IB=0 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage VCEX VCBO VEBO IC=100µA, VEB=1.5V IC=100µA, IE=0 IE=100µA, IC=0 Collector Cut Off Current ICBO VCB=60V, IE=0 VCB=60V, IE=0, Ta=150ºC Emitter Cut Off Current IEBO VEB=5V, IC=0 DC Current Gain hFE IC=0.1mA, VCE=10V *IC=10mA, VCE=10V *IC=10mA, VCE=10V, Ta=55ºC *IC=150mA, VCE=10V *IC=500mA, VCE=10V *IC=1A, VCE=10V MIN 80 65 120 120 7 20 35 20 40 25 10 *Pulse Test: Pulse Width < 300µs, Duty Cycle < 2% **Rth (j-a) is measured with the device soldered into a typical printed circuit board 2N2102Rev_1 040904E UNIT V V V V...