P-Channl Silicon MOSFET
Ordering number:ENN6421
Features
· Low ON resistance. · Ultrahigh-speed switching. · 4V drive.
P-Channel Silicon MOSFET...
Description
Ordering number:ENN6421
Features
· Low ON resistance. · Ultrahigh-speed switching. · 4V drive.
P-Channel Silicon MOSFET
2SJ348
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2052C
[2SJ348]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
2.7 14.0
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25˚C
2.55
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
V(BR)DSS V(BR)GSS
IDSS IGSS VGS(off) | yfs |
RDS(on)
ID=–1mA, VGS=0 IG=±100µA, VDS=0 VDS=–60V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–15A ID=–15A, VGS=–10V ID=–15A, VGS=–4V
2.55
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220
Ratings –60 ±20 –30
–120 1.75
70 150 –55 to +150
Unit V V A A W W ˚C ˚C
Ratings min typ max
Unit
–60 V
±20 V
–100 µA
±10 µA
–1.0
–2.0 V
15 25
S
30 40 mΩ
40 55 mΩ
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, su...
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