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IRLML6246TRPbF Dataheets PDF



Part Number IRLML6246TRPbF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRLML6246TRPbF DatasheetIRLML6246TRPbF Datasheet (PDF)

VDS VGS Max RDS(on) max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) 20 ± 12 V V 46 m: 66 m: PD - 97529A IRLML6246TRPbF HEXFET® Power MOSFET G1 S2 3D Micro3TM (SOT-23) IRLML6246TRPbF Application(s) • Load/ System Switch Features and Benefits Features Industry-standard SOT-23 Package RoHS compliant containing no lead, no bromide and no halogen Benefits Multi-vendor compatibility results in Environmentally friendly Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID @ T.

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VDS VGS Max RDS(on) max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) 20 ± 12 V V 46 m: 66 m: PD - 97529A IRLML6246TRPbF HEXFET® Power MOSFET G1 S2 3D Micro3TM (SOT-23) IRLML6246TRPbF Application(s) • Load/ System Switch Features and Benefits Features Industry-standard SOT-23 Package RoHS compliant containing no lead, no bromide and no halogen Benefits Multi-vendor compatibility results in Environmentally friendly Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor VGS TJ, TSTG Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance Symbol Parameter eRθJA Junction-to-Ambient fRθJA Junction-to-Ambient (t<10s) Max. 20 4.1 3.3 16 1.3 0.8 0.01 ± 12 -55 to + 150 Typ. ––– ––– Max. 100 99 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes  through „ are on page 10 www.irf.com Units V A W W/°C V °C Units °C/W 1 10/12/12 IRLML6246TRPbF Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Δ V(BR)DSS/Δ TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) IDSS Gate Threshold Voltage Drain-to-Source Leakage Current IGSS RG gfs Qg Qgs Qgd td(on) tr td(off) tf Cis s Cos s Crs s Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 20 ––– ––– V VGS = 0V, ID = 250μA ––– 0.03 ––– V/°C Reference to 25°C, ID = 1mA ––– 30 ––– 45 d46 mΩ VGS = 4.5V, ID = 4.1A d66 VGS = 2.5V, ID = 3.3A 0.5 0.8 1.1 V VDS = VGS, ID = 5μA ––– ––– 1.0 ––– ––– 10 VDS =16V, VGS = 0V μA VDS = 16V, VGS = 0V, TJ = 55°C ––– ––– 150 VDS = 16V, VGS = 0V, TJ = 125°C ––– ––– 100 nA VGS = 12V ––– ––– -100 VGS = -12V ––– 4.0 ––– Ω 10 ––– ––– S VDS = 10V, ID = 4.1A ––– 3.5 ––– ––– 0.26 ––– ––– 1.7 ––– ––– 3.6 ––– ID = 4.1A nC VDS =10V dVGS = 4.5V dVDD =10V ––– 4.9 ––– ns ID = 1.0A ––– 11 ––– RG = 6.8Ω ––– 6.0 ––– VGS = 4.5V ––– 290 ––– ––– 64 ––– VGS = 0V pF VDS = 16V ––– 41 ––– ƒ = 1.0MHz Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) ISM Pulsed Source Current Ù(Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ––– ––– 1.3 ––– ––– 16 ––– ––– 1.2 ––– 8.6 13 ––– 2.8 4.2 MOSFET symbol D A showing the integral reverse G S p-n junction diode. dV TJ = 25°C, IS = 4.1A, VGS = 0V ns TJ = 25°C, VR = 15V, IF=1.3A dnC di/dt = 100A/μs 2 www.irf.com ID, Drain-to-Source Current (A) IRLML6246TRPbF 100 ≤60μs PULSE WIDTH Tj = 25°C 10 1 0.1 0.01 0.1 1.5V TOP BOTTOM VGS 10V 4.5V 3.0V 2.5V 2.3V 2.0V 1.8V 1.5V 1 10 VDS, Drain-to-Source Voltage (V) 100 Fig 1. Typical Output Characteristics ID, Drain-to-Source Current (A) 100 ≤60μs PULSE WIDTH Tj = 150°C 10 1 0.1 0.1 1.5V TOP BOTTOM VGS 10V 4.5V 3.0V 2.5V 2.3V 2.0V 1.8V 1.5V 1 10 VDS, Drain-to-Source Voltage (V) 100 Fig 2. Typical Output Characteristics ID, Drain-to-Source Current (A) 100 10 TJ = 150°C 1 TJ = 25°C VDS = 15V ≤60μs PULSE WIDTH 0.1 1.0 1.5 2.0 2.5 3.0 3.5 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = 4.1A VGS = 4.5V 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 3 C, Capacitance (pF) IRLML6246TRPbF 10000 1000 100 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss Coss Crss 10 1 10 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 VGS, Gate-to-Source Voltage (V) 14.0 12.0 ID= 4.1A 10.0 VDS= 16V VDS= 10V VDS= 4.0V 8.0 6.0 4.0 2.0 0.0 0.0 2.0 4.0 6.0 QG, Total Gate Charge (nC) 8.0 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage ISD, Reverse Drain Current (A) 100 10 1 TJ = 150°C TJ = 25°C 0 0.0 0.2 VGS = 0V 0.4 0.6 0.8 1.0 VSD, Source-to-Drain Voltage (V) 1.2 Fig 7. Typical Source-Drain Diode Forward Voltage 4 ID, Drain-to-Source Current (A) 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 100μsec 1msec 1 0.1 TA = 25°C Tj = 150°C Single Pulse 0.01 0.1 1 10msec 10 VDS, Drain-to-Source Voltage (V) 100 Fig 8. Maximum Safe Operating Area www.irf.com IRLML6246TRPbF ID , Drain Current (A) 5.0 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 TA , Ambient Temperature (°C) Fig 9. Maximum Dr.


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