Document
VDS VGS Max
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
20 ± 12
V V
46 m:
66 m:
PD - 97529A
IRLML6246TRPbF
HEXFET® Power MOSFET
G1 S2
3D
Micro3TM (SOT-23) IRLML6246TRPbF
Application(s) • Load/ System Switch
Features and Benefits Features
Industry-standard SOT-23 Package RoHS compliant containing no lead, no bromide and no halogen
Benefits
Multi-vendor compatibility results in Environmentally friendly
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor
VGS TJ, TSTG
Gate-to-Source Voltage Junction and Storage Temperature Range
Thermal Resistance
Symbol
Parameter
eRθJA Junction-to-Ambient fRθJA Junction-to-Ambient (t<10s)
Max.
20 4.1 3.3 16 1.3 0.8 0.01 ± 12 -55 to + 150
Typ.
––– –––
Max.
100 99
ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
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Units
V A
W W/°C
V °C
Units
°C/W
1
10/12/12
IRLML6246TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Δ V(BR)DSS/Δ TJ
RDS(on)
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th) IDSS
Gate Threshold Voltage Drain-to-Source Leakage Current
IGSS
RG gfs Qg Qgs Qgd td(on) tr td(off) tf Cis s Cos s Crs s
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
20 ––– ––– V VGS = 0V, ID = 250μA
––– 0.03 ––– V/°C Reference to 25°C, ID = 1mA
––– 30 ––– 45
d46 mΩ VGS = 4.5V, ID = 4.1A d66 VGS = 2.5V, ID = 3.3A
0.5 0.8 1.1
V VDS = VGS, ID = 5μA
––– ––– 1.0 ––– ––– 10
VDS =16V, VGS = 0V μA VDS = 16V, VGS = 0V, TJ = 55°C
––– ––– 150
VDS = 16V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 12V
––– ––– -100
VGS = -12V
––– 4.0 ––– Ω
10 ––– ––– S VDS = 10V, ID = 4.1A
––– 3.5 ––– ––– 0.26 ––– ––– 1.7 ––– ––– 3.6 –––
ID = 4.1A nC VDS =10V
dVGS = 4.5V dVDD =10V
––– 4.9 ––– ns ID = 1.0A
––– 11 –––
RG = 6.8Ω
––– 6.0 –––
VGS = 4.5V
––– 290 ––– ––– 64 –––
VGS = 0V pF VDS = 16V
––– 41 –––
ƒ = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current
Ã(Body Diode)
VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge
––– ––– 1.3
––– ––– 16
––– ––– 1.2 ––– 8.6 13 ––– 2.8 4.2
MOSFET symbol
D
A showing the integral reverse
G
S
p-n junction diode.
dV TJ = 25°C, IS = 4.1A, VGS = 0V
ns TJ = 25°C, VR = 15V, IF=1.3A
dnC di/dt = 100A/μs
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ID, Drain-to-Source Current (A)
IRLML6246TRPbF
100 ≤60μs PULSE WIDTH Tj = 25°C
10
1
0.1
0.01 0.1
1.5V
TOP BOTTOM
VGS 10V
4.5V 3.0V 2.5V 2.3V
2.0V 1.8V 1.5V
1 10 VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
ID, Drain-to-Source Current (A)
100 ≤60μs PULSE WIDTH Tj = 150°C
10
1
0.1 0.1
1.5V
TOP BOTTOM
VGS 10V 4.5V 3.0V
2.5V 2.3V 2.0V 1.8V
1.5V
1 10 VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
ID, Drain-to-Source Current (A)
100
10 TJ = 150°C
1 TJ = 25°C VDS = 15V ≤60μs PULSE WIDTH
0.1 1.0 1.5 2.0 2.5 3.0 3.5 VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0 ID = 4.1A VGS = 4.5V
1.5
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance Vs. Temperature
3
C, Capacitance (pF)
IRLML6246TRPbF
10000 1000 100
VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd
Ciss Coss Crss
10 1
10 VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
100
VGS, Gate-to-Source Voltage (V)
14.0 12.0
ID= 4.1A
10.0
VDS= 16V VDS= 10V VDS= 4.0V
8.0
6.0
4.0
2.0
0.0 0.0
2.0 4.0 6.0 QG, Total Gate Charge (nC)
8.0
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
ISD, Reverse Drain Current (A)
100
10
1 TJ = 150°C
TJ = 25°C 0
0.0 0.2
VGS = 0V
0.4 0.6 0.8 1.0 VSD, Source-to-Drain Voltage (V)
1.2
Fig 7. Typical Source-Drain Diode Forward Voltage
4
ID, Drain-to-Source Current (A)
100 OPERATION IN THIS AREA LIMITED BY RDS(on)
10 100μsec 1msec
1
0.1 TA = 25°C Tj = 150°C Single Pulse
0.01
0.1 1
10msec 10
VDS, Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area
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IRLML6246TRPbF
ID , Drain Current (A)
5.0
4.0
3.0
2.0
1.0
0.0 25
50 75 100 125
TA , Ambient Temperature (°C)
Fig 9. Maximum Dr.