HEXFET Power MOSFET
VDS
VGS Max
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
30 ± 12 29
37
Application(s) • Load/ System Switch
V ...
Description
VDS
VGS Max
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
30 ± 12 29
37
Application(s) Load/ System Switch
V V mΩ
mΩ
G1 S2
Features and Benefits
Low RDSon (<29mΩ) Industry-standard SOT-23 Package RoHS compliant containing no lead, no bromide and no halogen MSL1, Consumer Qualification
IRLML6344TRPbF
HEXFET® Power MOSFET
3D
Micro3TM (SOT-23) IRLML6344TRPbF
results in
Benefits
Lower Conduction Losses
Multi-vendor compatibility Environmentally friendly Increased Reliability
Base Part Number IRLML6344TRPbF
Package Type Micro3™(SOT-23)
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number IRLML6344TRPbF
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
PD @TA = 70°C
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
TJ, TSTG
Junction and Storage Temperature Range
Max.
30 5.0 4.0 25 1.3 0.8 0.01 ± 12 -55 to + 150
Units
V
A
W
W/°C V °C
Thermal Resistance
Symbol
Parameter
eRθJA Junction-to-Ambient fRθJA Junction-to-Ambient (t<10s)
Typ.
––– –––
ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet.
Max.
100 99
Units
°C/W
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December 19, 2014
IRLML6344TRPbF
Electric Characteristics @ TJ = 25°C ...
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