IRG4PH40S

PD -91808 INSULATED GATE BIPOLAR TRANSISTOR IRG4PH40S Standard Speed IGBT Features Extremely low on state voltage drop 1.0V typical at 5.0A Extremely low VCE(on) variation from lot to lot Industry standard TO-247AC package C G E N-channel VCES = 1200V VCE(on) typ. = 1.46V @VGE = 15V, IC = 20A Benefits High current density systems Optimized for specific application conditions Lower voltage drop than many high voltage MOSFETs Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current ‚ Gate-to-Emitter Voltage Reverse Voltage Avalanche Energyƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Thermal Resistance RθJC RθCS RθJA Wt www.irf.com Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight TO-247AC Max. 1200 33 20 66 66 ±20 250 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm) Units V A V mJ W °C Typ. ––– 0.24 ––– 6.0(0.21) Max. 0.77 ––– 40 ––– Units °C/W g (oz) 1 9/23/98 IRG4PH40S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Coll...