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CD216A-B130L Dataheets PDF



Part Number CD216A-B130L
Manufacturers Bourns
Logo Bourns
Description MITE Chip Diode
Datasheet CD216A-B130L DatasheetCD216A-B130L Datasheet (PDF)

A*VRAVIoELHRASSBICLOEONMSPLIANT Features ■ Lead free versions available ■ RoHS compliant (lead free version)* ■ Low profile ■ Surface mount ■ Very low forward voltage drop Applications ■ Cellular phones ■ PDAs ■ Desktop PCs and notebooks ■ Digital cameras ■ MP3 players CD216A-B120L ~ B140 MITE Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bo.

  CD216A-B130L   CD216A-B130L


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A*VRAVIoELHRASSBICLOEONMSPLIANT Features ■ Lead free versions available ■ RoHS compliant (lead free version)* ■ Low profile ■ Surface mount ■ Very low forward voltage drop Applications ■ Cellular phones ■ PDAs ■ Desktop PCs and notebooks ■ Digital cameras ■ MP3 players CD216A-B120L ~ B140 MITE Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications in compact DO-216AA size chip package formats, which offer PCB real estate savings and are considerably smaller than competitive parts. The Schottky Barrier Rectifier Diodes offer a forward current of 1 A with a choice of repetitive peak reverse voltage of 20 V up to 40 V. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration minimizes roll away. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol B120L Forward Voltage (Max.) (If = 1 A) Typical Junction Capacitance* VF 0.45 CT 90 Reverse Current (Max.) (at Rated VR) IR 400 * Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol B120L Repetitive Peak Reverse Voltage DC Blocking Voltage RMS Voltage Average Forward Current @ TL = 130 °C Peak Forward Surge Current** Max. Instantaneous Forward Voltage*** @ IF = 0.1 A @ IF = 1.0 A @ IF = 2.0 A @ IF = 3.0 A Max. Instantaneous Reverse Current @ VR = 40 V @ VR = 30 V @ VR = 20 V @ VR = 10 V @ VR = 5 V Thermal Resistance Junction to Lead (Anode) Junction to Tab (Cathode) Junction to Ambient Storage Temperature Junction Temperature VRRM VDC VRMS IO IFSM VF IR RθJL RθJTAB RθJA TSTG TJ 20 20 14 50 0.34 0.45 0.65 0.4 0.1 ** Surge Current 8.3 ms single phase, half sine wave, 60 Hz (JEDEC Method). *** Pulse Test; Pulse Width = 300 uS, Duty Cycle = 2 %. CD216- B120R B130L 0.53 0.38 75 70 10 410 CD216- B120R B130L 20 30 20 30 14 21 1 50 50 0.455 0.53 0.595 0.30 0.38 0.52 0.0100 0.0010 0.0005 0.41 0.13 0.05 35 20 250 -55 to +125 -55 to +150 B140 0.55 60 500 Unit V pF µA B140 40 40 28 40 0.36 0.55 0.85 0.50 0.15 Unit V V V A A V mA °C/W °C/W °C/W °C °C *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD216A-B120L ~ B140 MITE Chip Diode Product Dimensions H Recommended Pad Layout A AB C K BJ C G I GF E D Dimension A B C D E F G H I J K (DO-216AA) 1.75 - 2.05 (0.069 - 0.081) 1.80 - 2.20 (0.071 - 0.087) 0.95 - 1.25 (0.037 - 0.049) 0.42 - 0.68 (0.017 - 0.027) 0.70 - 1.00 (0.028 - 0.039) -0.05 - +0.10 (0.002 - 0.004) 0.10 - 0.25 (0.004 - 0.010) 3.65 - 3.95 (0.144 - 0.156) 0.40 - 0.70 (0.016 - 0.028) 1.10 - 1.50 (0.043 - 0.059) 0.20 - 0.80 (0.008 - 0.060) DIMENSIONS: MM (INCHES) DE Dimension A (Max.) B (Min.) C (Min.) D (Max.) E (Min.) DO-216AA 2.67 (0.105) 2.54 (0.100) 1.27 (0.050) 0.635 (0.025) 0.762 (0.030) Physical Specifications Case..............................................JEDEC DO-216AA Molded plastic Polarity ................................................Cathode designated by TAB 1 Weight ....................................................Approximately 0.016 grams Mounting Position ................................................................One way Typical Part Marking CD216A-B120L ..........................................................................B2L CD216A-B120R ..........................................................................B2E CD216A-B130L ..........................................................................B3L CD216A-B140 ............................................................................B4S How To Order CD 216A - B 1 20 L __ Common Code Chip Diode Package • 216A = DO-216AA Model B = Schottky Barrier Series Average Forward Current (Io) Code 1 = 1 A (Code x 1000 mA = Average Forward Current) Reverse Voltage 20 = 20 V (VR) Code 30 = 30 V 40 = 40 V Forward Voltage Suffix L = Low Forward Voltage Vf (CD216-B120L, CD216-B130L) R = Low Leakage Current IR (CD216-B120R) Terminations LF = 100 % Sn (lead free) Blank = Sn/Pb Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Forward Current (Amps) CD216A-B120L ~ B140 MITE Chip Diode Rating and Characteristic Curves: CD216A-B120L Forward Characteristics 10 Ta = 25 °C Pulsewidth: 300 µs 1 Reverse Current (µA) Reverse Characteristics 100 10 125 °C 100 °C 1 0.1 25 °C 0.01 0.1 0.0 125 °C 100 °C 0.2 25 °C 0.4 Forward Voltage (Volts) 0.6 0.8 0.001 0 5 10 15 20 Reverse Voltage (Volts) 25 Derating Curve 1.25 Capacitance Between Terminals 200 180 F = 1 MHz 1.00 160 Ta = 25 °C Capacitance (pF).


CD216A-B120R CD216A-B130L CD216A-B140


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