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AP20SL60I-A-HF

Advanced Power Electronics

N-Channel MOSFET

Advanced Power Electronics Corp. AP20SL60I-A-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Fast Sw...


Advanced Power Electronics

AP20SL60I-A-HF

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Description
Advanced Power Electronics Corp. AP20SL60I-A-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G D S Description AP20SL60 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. VDS @ Tj,max. RDS(ON) ID3,4 700V 0.19Ω 20A G DS TO-220CFM(I) Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 650 V VGS ID@TC=25℃ ID@TC=100℃ IDM Gate-Source Voltage Drain Current, VGS @ 10V3,4 Drain Current, VGS @ 10V3,4 Pulsed Drain Current1 +20 V 20 A 12.3 A 48 A PD@TC=25℃ Total Power Dissipation 34.7 W PD@TA=25℃ EAS Total Power Dissipation Single Pulse Avalanche Energy5 1.92 W 20 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice ...




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