C2120

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SC2120 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 35 30 5 800 600 +150 -55 to +150 Unit V V V mA mW oC oC TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) .500 (12.70) Min 2o Typ 2o Typ .050 (1.27)Typ .022(0.56) .014(0.36) .100 (2.54) Typ .022(0.56) .014(0.36) 321 .148(3.76) .132(3.36) .050 5oTyp. 5oTyp. (1.27)Typ Dimensions in inches and (millimeters) Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) Characteristic Symbol Min Collector-Base Breakdown Volatge BVCBO 35 Collector-Emitter Breakdown Voltage BVCEO 30 Emitter-Base Breakdown Volatge BVEBO 5 Collector Cutoff Current ICBO - Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) IEBO VCE(sat) VBE(sat) - DC Current Gain(1) hFE1 hFE2 45 100 hFE3 40 Transition Frequency fT - Output Capacitance Cob - (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Typ - 0.28 0.98 120 13 Max 0.1 0.1 0.7 1.3 - 320 - Unit V V V µA µA V V - MHz pF Test Conditions IC=100µA, IE=0 IC=2mA, IB=0 IE...