DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SC2120
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
...
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SC2120
TECHNICAL SPECIFICATIONS OF
NPN EPITAXIAL PLANAR
TRANSISTOR
Description
Designed for audio frequency amplifier applications.
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC PD TJ TSTG
Rating 35 30 5 800 600
+150 -55 to +150
Unit V V V mA
mW oC oC
TO-92
.190(4.83) .170(4.33)
.190(4.83) .170(4.33)
.500 (12.70)
Min
2o Typ 2o Typ
.050 (1.27)Typ
.022(0.56) .014(0.36)
.100 (2.54)
Typ
.022(0.56) .014(0.36)
321
.148(3.76) .132(3.36)
.050 5oTyp. 5oTyp. (1.27)Typ Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO
35
Collector-Emitter Breakdown Voltage
BVCEO
30
Emitter-Base Breakdown Volatge
BVEBO
5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1)
IEBO VCE(sat) VBE(sat)
-
DC Current Gain(1)
hFE1 hFE2
45 100
hFE3
40
Transition Frequency
fT -
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ -
0.28 0.98
120 13
Max 0.1 0.1 0.7 1.3 -
320 -
Unit V V V µA µA V V -
MHz pF
Test Conditions IC=100µA, IE=0 IC=2mA, IB=0 IE...