STF4N52K3

STF4N52K3 Datasheet N-channel 525 V, 2.1 Ω typ., 2.5 A MDmesh™ K3 Power MOSFET in a TO-220FP package Features Order code VDS RDS(on) max. ID Package 3 ) 1 2 t(s TO-220FP c D(2) Produ G(1) ct(s) - Obsolete S(3) STF4N52K3 525 V 2.6 Ω 100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected 2.5 A TO-220FP NG1D2S3Z Applications Switching applications Description This MDmesh™ K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. rodu Product status link te P STF4N52K3 le Product summary so Order code STF4N52K3 ObMarking 4N52K3 Package TO-220FP Packing Tube DS12708 - Rev 1 - August 2018 For further information contact your local STMicroelectronics sales office. www.st.com STF4N52K3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 525 V VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C ) ID Drain current (continuous) at TC = 100 °C t(s IDM (2) Drain current (pulsed) uc PTOT Total dissipation at TC = 25 °C d dv/dt (3) Peak diode recovery voltage slope Pro VISO Insulation...