STD7N80K5

STD7N80K5, STP7N80K5, STU7N80K5 Datasheet N-channel 800 V, 0.95 Ω typ., 6 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB 3 DPAK 1 TAB TAB TO-220 1 23 IPAK 123 D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS STD7N80K5 STP7N80K5 800 V STU7N80K5 Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected RDS(on) max ID 1.2 Ω 6A Applications Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STD7N80K5 STP7N80K5 STU7N80K5 DS9173 - Rev 7 - September 2020 For further information contact your local STMicroelectronics sales office. www.st.com STD7N80K5, STP7N80K5, STU7N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate- source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C IAR Max current during repetitive or single pulse avalanche (pulse width limited by Tjmax) Single pulse avalanche energy EAS (starting TJ = 25 °C, ID=IAS, VDD= 50 V) dv/dt (2) Peak diode recovery vo...