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K10A60W

Part Number	K10A60W
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel MOSFET
Features	(1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to con...
Published	Jan 5, 2015
Datasheet	K10A60W PDF File

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK10A60W...

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