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DSEI30-06A

IXYS

Fast Recovery Epitaxial Diode

Fast Recovery Epitaxial Diode (FRED) DSEI 30 IFAVM = 37 A VRRM = 600 V trr = 35 ns VRSM V 640 VRRM V 600 Type DSEI ...


IXYS

DSEI30-06A

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Description
Fast Recovery Epitaxial Diode (FRED) DSEI 30 IFAVM = 37 A VRRM = 600 V trr = 35 ns VRSM V 640 VRRM V 600 Type DSEI 30-06A TO-247 AD AC C A A = Anode, C = Cathode C Symbol IFRMS IFAVM ÿÿx IFRM IFSM I2t TVJ TVJM Tstg Ptot Md Weight Symbol IR VF VT0 rT RthJC RthCK RthJA trr IRM Test Conditions TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TC = 25°C Mounting torque Maximum Ratings 70 37 375 300 320 260 280 450 420 340 320 -40...+150 150 -40...+150 125 0.8...1.2 6 A A A A A A A A2s A2s A2s A2s °C °C °C W Nm g Test Conditions Characteristic Values typ. max. TVJ = 25°C TVJ = 25°C TVJ = 125°C VR = VRRM VR = 0.8 VRRM VR = 0.8 VRRM IF = 37 A; TVJ = 150°C TVJ = 25°C For power-loss calculations only TVJ = TVJM 0.25 IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C VR = 350 V; IF = 30 A; -diF/dt = 240 A/ms L £ 0.05 mH; TVJ = 100°C 35 10 100 50 7 1.4 1.6 1.01 7.1 1 35 50 11 mA mA mA V V V mW K/W K/W K/W ns A Features q International standard package JEDEC TO-247 AD q Planar passivated chips q Very short recovery time q Extremely low switching losses q Low I -values RM q Soft recovery behaviour q Epoxy meets UL 94V-0 Applications q Antiparallel diode for high frequency s...




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