isc Silicon PNP Power Transistor
BD314
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = -4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0 V(Max)@ IC = -5A ·Complement to Type BD313 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high quality amplifiers op...
