RU3205

RU3205 N-Channel Advanced Power MOSFET MOSFET Features 60V/100A, RDS (ON) =7.5mΩ(max.)@VGS=10V IDS=40A Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 175°C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Applications Switching Application Systems Pin Description TO-220 TO-220F TO-263 TO-247 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 60 ±25 175 -55 to 175 100 ① 400 90 82 275 200 0.55 1.2 Unit V °C °C A A A W °C/W J Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAR., 2009 www.ruichips.com Downloaded from Elcodis.com electronic components distributor RU3205 Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU3205 Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current ② RDS(ON) Drain-Source On-st...