2N04H4

OptiMOS® Power-Transistor Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated P- TO262 -3-1 SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 Product Summary VDS 40 V RDS(on) 4 mΩ ID 80 A P- TO263 -3-2 P- TO220 -3-1 Type SPP80N04S2-H4 SPB80N04S2-H4 SPI80N04S2-H4 Package Ordering Code P- TO220 -3-1 Q67060-S6014 P- TO263 -3-2 Q67060-S6013 P- TO262 -3-1 Q67060-S6014 Marking 2N04H4 2N04H4 2N04H4 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C ID Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80 A , VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=80A, VDS=32V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value 80 80 320 660 25 6 ±20 300 -55... +175 55/175/56 Unit A mJ kV/µs V W °C Page 1 2003-05-08 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 Symbol Values Unit min. typ. max. RthJC RthJA RthJA - 0.35 0.5 K/W - - 62 - - 62 - - 40 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Ch...