ST 2SC4002
NPN Silicon Triple Diffused Planar Transistor for High-Voltage Driver Applications.
The transistor is subdivi...
ST 2SC4002
NPN Silicon Triple Diffused Planar
Transistor for High-Voltage Driver Applications.
The
transistor is subdivided into two groups, D and E, according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.18g
Absolute Maximum Ratings (T a = 25oC)
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC ICP Ptot Tj TS
G S P FORM A IS AVAILABLE
Value 400 400
5 200 400 600 150 -55 to +150
Unit V V V mA mA
mW OC OC
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта:
[email protected] Веб: www.rct.ru
®
ST 2SC4002
Characteristics at Tamb=25 oC
DC Current Gain at VCE=10V, IC=50mA Current Gain Group D E
Collector Cutoff Current at VCB=300V
Emitter Cutoff Current at VEB=4V
Collector Emitter Saturation Voltage at IC=50mA, IB=5mA
Base Emitter Saturation Voltage at IC=50mA, IB=5mA
Gain Bandwidth Product at VCE=30V, IC=10mA
Symbol
hFE hFE ICBO IEBO VCE(sat) VBE(sat) fT
Min.
60 100
-
G S P FORM A IS AVAILABLE
Typ.
70
Max.
120 200 0.1 0.1 0.6 1.0
-
Unit -
µA
µA
V
V
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
...