K3142

2SK3142 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 4 mΩ typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline TO–220CFM ADE-208-681A (Z) 2nd. Edition February 1999 D G 123 1. Gate 2. Drain 3. Source S 2SK3142 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID I Note 1 D(pulse) I DR I Note 3 AP E Note 3 AR Pch Note 2 Channel temperature Tch Storage temperature Tstg Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Ratings 30 ±20 60 240 60 35 122 35 150 –55 to +150 Unit V V A A A A mJ W °C °C 2 2SK3142 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS Gate to source leak current I GSS Zero gate voltege drain current I DSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance 30 — — 1.0 — — Forward transfer admittance Input capacitance |yfs| Ciss 45 — Output capacitance Coss — Reverse transfer capacitance Crss — Total gate charge Qg — Gate to source charge Qgs — Gate to drain charge Qgd — Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time t d(on) tr t d(off) tf ...