200V N-Channel MOSFET
FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET
FQD10N20C / FQU10N20C
N-Channel QFET® MOSFET
200 V, 7.8 A, 360 mΩ
Featur...
Description
FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET
FQD10N20C / FQU10N20C
N-Channel QFET® MOSFET
200 V, 7.8 A, 360 mΩ
Features
7.8 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.9 A
Low Gate Charge (Typ. 20 nC) Low Crss (Typ. 40.5 pF) 100% Avalanche Tested
November 2013
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D D
G S
D-PAK
GDS
I-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
FQD10N20CTM / FQU10N20CTU
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
200 7.8 5.0 31.2 ± 30 210 7.8 5.0 5.5
PD
Power Dissipation (TC = 25°C) - Derate above 25°C
50 0.4
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
-55 to +150 300
Thermal Characteristics
Symbol RθJC RθJA
Param...
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