FQU10N20C

FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET FQD10N20C / FQU10N20C N-Channel QFET® MOSFET 200 V, 7.8 A, 360 mΩ Features 7.8 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.9 A Low Gate Charge (Typ. 20 nC) Low Crss (Typ. 40.5 pF) 100% Avalanche Tested November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter FQD10N20CTM / FQU10N20CTU VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 200 7.8 5.0 31.2 ± 30 210 7.8 5.0 5.5 PD Power Dissipation (TC = 25°C) - Derate above 25°C 50 0.4 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds -55 to +150 300 Thermal Characteristics Symbol RθJC RθJA Param...