D2053

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2053 DESCRIPTION www.dat·aWshiethet4TuO.co-3mPN package ·Wide area of safe operation ·Complement to type 2SB1362 APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO VEBO IC ICP Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Ta=25 TC=25 VALUE 150 150 5 9 15 2.5 100 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2053 CHARACTERISTICS Tj=25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0 VCEsat Collector-emitter saturation voltage IC=7A; IB=0.7A VBE Base-emitter on voltage IC=7A;VCE=5V ICBO Collector cut-off current VCB=150V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=20mA ; VCE=5V hFE-2 DC current gain IC=1A ; VCE=5V hFE-3 DC current gain IC=7A ; VCE=5V fT Transition frequency IC=0.5A ; VCE=5V COB Collector output capacitance f=1MHz;VCB=10V MIN TYP. MAX UNIT 150 V 2.0 V 1.8 V 50 µA 50 µA 20 60 200 15 20 MH...