Power MOSFET
Q3-Class HiperFETTM Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Rectifier
IXFK32N100Q3 IXFX32N100Q3
D
G S
S...
Description
Q3-Class HiperFETTM Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Rectifier
IXFK32N100Q3 IXFX32N100Q3
D
G S
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dv/dt
PD TJ TJM Tstg
L
TSOLD Md FC Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
Maximum Ratings
1000
V
1000
V
30
V
40
V
TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C
32
A
96
A
32
A
2
J
IS IDM, VDD VDSS, TJ 150C TC = 25C
50
1250
-55 ... +150 150
-55 ... +150
V/ns
W
C C C
Maximum Lead Temperature for Soldering
300
°C
Plastic Body for 10s
260
°C
Mounting Torque (TO-264) Mounting Force (PLUS247)
1.13/10 20..120 /4.5..27
Nm/lb.in. N/lb.
TO-264 PLUS247
10
g
6
g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
1000
V
3.5
6.5 V
200 nA
50 A 3 mA
320 m
VDSS =
ID25 =
RDS(on)
trr
1000V 32A 320m 300ns
TO-264 (IXFK)
G D S
Tab
PLUS247 (IXFX)
G
D S
Tab
G = Gate D = Drain S = Source Tab = Drain
Features
International Standard Packages Low Intrinsic Gate Resistance Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG
Advantages
High Power Density Easy to Mount Space Savings
Applications
DC-DC Converter...
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