SDT122

SDT122 53mm / 4.0kV THYRISTOR Type SDT122 thyristor is suitable for phase control applications such as HVDC valves, static VAR compensators and synchronous motor drives. The silicon junction is manufactured by the proven multi-diffusion process and is supplied in an industry standard disc-type package, ready to mount to forced or naturally cooled heat dissipators using commercially available mechanical clamping hardware. ON-STATE CHARACTERISTIC Process Maximum 8 ms Sine Pulses On-State Voltage, Vt (V) 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 100 95f: Initial Tj 125 C 25 C 1000 On-State Current, It (A) 10000 MECHANICAL OUTLINE J CL CL 2 0° ±5 ° AØ BØ D BØ A Φ = 2.96 in (75.2 mm) BΦ=1.90 in (48.3 mm) D=1.07 in (27.2 mm) PRINCIPAL RATINGS AND CHARACTERISTICS Repetitive peak offstate & reverse volts Repetitive working crest voltage Off-state & reverse leakage current Average on-state current V DRM V RRM T =0 J to 125oC V T =0 DWM J V to 125oC DRM I DWM I RWM T =0 J to 125oC I T(AV) T= case 70oC Peak half-cycle I 60 Hz TSM non-rep surge current 50 Hz On-state voltage Critical rate of rise of on-state current V TM di/dt rep I =1kA T t =8ms P T =125oC J T =125oC J 60 Hz Critical rate of rise of off-state voltage Recovery current dv/dt T =125oC J V = .8V D DRM I T =125oC RM J 2A/us 5A/us Turn-on delay Turn-off time t Vd=.5V d DRM T 5A/us,-100V off 20V/us to 2000V Thermal resistance Externally applied clamping force R thJC F up to 4000 0.8V DRM 0.8V...