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M54566DP

Mitsubishi

7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

MITSUBISHI SEMICONDUCTORS M54566DP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566DP is...


Mitsubishi

M54566DP

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Description
MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54566DP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566DP is seven-circuit collector current sink type darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES ●High breakdown voltage (BVCEO> 50V) ●High-current driving (Ic(max) = 400mA) ●Active L-level input PIN CONFIGURATION INPUT IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 GND 8 16 →O1 15 →O2 14 →O3 13 →O4 12 →O5 11 →O6 10 →O7 9 VCC OUTPUT APPLICATIONS Interfaces between microcomputers and high-voltage, high-current drive systems, drives of relays and printers, and MOS-bipolar logic IC interfaces. Package type 16P2X-B CIRCUIT DIAGRAM FUNCTION The M54566 is produced by adding PNP transistors to M54522 inputs. Seven circuits having active L-level inputs are provided. Resistance of 8kΩ is provided between each input and PNP transistor base. The input emitters are connected to VCC pin (pin 9). Output transistor emitters are all connected to the GND pin (pin 8). Collector current is 400mA maximum. Collector-emitter supply voltage is 50V maximum. These ICs are optimal for drivers that are driven with NMOSIC output and absorb collector current. INPUT 20K 2.7K 8K 7.2K 3K VCC OUTPUT GND The seven circuits share the VCC and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit:Ω ABS...




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