HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power l High Frequency Isolated DC-DC
C...
Description
Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power l High Frequency Isolated DC-DC
Converters with Synchronous Rectification for Telecom and Industrial Use
Benefits
l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
and Current
PD - 94650A
IRLR3715Z
IRLU3715Z
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
:20V 11m
7.2nC
D-Pak IRLR3715Z
I-Pak IRLU3715Z
Absolute Maximum Ratings
Parameter VDS Drain-to-Source Voltage
VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation Maximum Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
gÃRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Notes through
are on page 11 www.irf.com
Max. 20 ± 20
49f 35f
200 40 20 0.27 -55 to + 175
300 (1.6mm from case)
Typ. ––– ––– –––
Max. 3.75 50 110
Units V A
W W/°C
°C
Units °C/W
1
04/02/03
IRLR/U3715Z
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS ∆ΒVDSS/∆TJ RDS(on)
VGS(th) ∆VGS(th)/∆TJ
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
Gate Threshold Voltage Gate Threshold Voltage Coefficie...
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