RF1S50N06SM

SEMICONDUCTOR RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM December 1995 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Features 50A, 60V rDS(ON) = 0.022Ω Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve +175oC Operating Temperature Description Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. PACKAGE AVAILABILITY DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE PART NUMBER PACKAGE BRAND RFG50N06 TO-247 RFG50N06 RFP50N06 TO-220AB RFP50N06 RF1S50N06 TO-262AA F1S50N06 RF1S50N06SM TO-263AB F1S50N06 NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, i.e.RF1S50N06SM9A. Formerly developmental type TA49018. DRAIN (FLANGE) JEDEC TO-262AA SOURCE DRAIN GATE A JEDEC TO-263AB Symbol G D GATE SOURCE MA A DRAIN (FLANGE) S Absolute Maximum Ratings TC = +25oC Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . ...