ULB4132

UNISONIC TECHNOLOGIES CO., LTD ULB4132 78A, 30V N-CHANNEL POWER MOSFET  DESCRIPTION The ULB4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 5.3 mΩ @ VGS=10V, ID=50A * RDS(ON) ≤ 8.0 mΩ @ VGS=4.5V, ID=40A  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free ULB4132L-TA3-T ULB4132G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube  MARKING www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-678.B ULB4132 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous ID Pulsed IDM 78 156 A A Single Pulsed Avalanche Energy (Note 3) EAS 48 mJ Single Pulsed Avalanche Current IAS 31 A Power Dissipation PD 60 W Junction Temperature TJ +150 °C Strong Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by maximum junction temperature 3. L = 0.1mH, IAS = 31A, VDD = 20V, RG = 25Ω, ...