IRFS4010PbF

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 96186A IRFS4010PbF IRFSL4010PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. 100V 3.9m: 4.7m: S ID 180A DD S G D2Pak IRFS4010PbF S D G TO-262 IRFSL4010PbF G Gate D Drain S Source Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cPulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage ePeak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) IAR EAR dSingle Pulse Avalanche Energy cAvalanche Current fRepetitive Avalanche Energy Thermal Resistance Symbol RθJC RθJA Parameter jkJunction-to-Case iJunction-to-Ambient (PCB Mount) www.irf.com Max. 180 127 720 375 2.5 ± 20 31 -55 to + 175 300 318 See Fig. 14, 15, 22a, 22b, Typ. ––– ––– Max. 0.40 40 Units A W W/°C V V/ns °C mJ A mJ Units °C/W 1 07/07/11 IRFS/SL4010PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. V(BR)DSS ΔV(BR)DSS/ΔTJ RD...