Document
DISCRETE SEMICONDUCTORS
DATA SHEET
BZX384 series Voltage regulator diodes
Product data sheet Supersedes data of 2003 Apr 01
2004 Mar 22
NXP Semiconductors
Voltage regulator diodes
Product data sheet
BZX384 series
FEATURES • Total power dissipation: max. 300 mW • Two tolerance series: ±2% and approx. ±5% • Working voltage range: nominal 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS • General regulation functions.
DESCRIPTION Low-power voltage regulator diodes encapsulated in a very small SOD323 (SC-76) plastic SMD package. The diodes are available in the normalized E24 ±2% (BZX384-B) and approx. ±5% (BZX384-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V.
PINNING
PIN DESCRIPTION
;;1 cathode
2 anode
handbook, halfpage
1
2
Top view
MAM387
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD323; SC-76) and symbol.
2004 Mar 22
2
NXP Semiconductors
Voltage regulator diodes
Product data sheet
BZX384 series
MARKING
TYPE NUMBER
MARKING CODE
TYPE NUMBER
MARKING CODE
TYPE NUMBER
Marking codes for BZX384-B2V4 to BZX384-B75
BZX384-B2V4 BZX384-B2V7 BZX384-B3V0 BZX384-B3V3 BZX384-B3V6 BZX384-B3V9 BZX384-B4V3 BZX384-B4V7 BZX384-B5V1 BZX384-B5V6
K1 K2 K3 K4 K5 K6 K7 K8 K9 L1
BZX384-B6V2 BZX384-B6V8 BZX384-B7V5 BZX384-B8V2 BZX384-B9V1 BZX384-B10 BZX384-B11 BZX384-B12 BZX384-B13 BZX384-B15
L2 L3 L4 L5 L6 L7 L8 L9 M1 M2
BZX384-B16 BZX384-B18 BZX384-B20 BZX384-B22 BZX384-B24 BZX384-B27 BZX384-B30 BZX384-B33 BZX384-B36 BZX384-B39
Marking codes for BZX384-C2V4 to BZX384-C75
BZX384-C2V4 BZX384-C2V7 BZX384-C3V0 BZX384-C3V3 BZX384-C3V6 BZX384-C3V9 BZX384-C4V3 BZX384-C4V7 BZX384-C5V1 BZX384-C5V6
T3 T4 T5 T6 T7 T8 T9 T0 D5 D6
BZX384-C6V2 BZX384-C6V8 BZX384-C7V5 BZX384-C8V2 BZX384-C9V1 BZX384-C10 BZX384-C11 BZX384-C12 BZX384-C13 BZX384-C15
T1 D7 D8 D9 D0 T2 DA DB DC DD
BZX384-C16 BZX384-C18 BZX384-C20 BZX384-C22 BZX384-C24 BZX384-C27 BZX384-C30 BZX384-C33 BZX384-C36 BZX384-C39
MARKING
TYPE
CODE
NUMBER
M3 BZX384-B43 M4 BZX384-B47 M5 BZX384-B51 M6 BZX384-B56 M7 BZX384-B62 M8 BZX384-B68 M9 BZX384-B75 N0 N1 N2
DE BZX384-C43 DF BZX384-C47 DG BZX384-C51 DH BZX384-C56 DJ BZX384-C62 DK BZX384-C68 DL BZX384-C75 DM DN DP
MARKING CODE
N3 N4 N5 N6 N7 N8 N9
DR DS DT DU DV DW DX
ORDERING INFORMATION
TYPE NUMBER
BZX384-B2V4 to BZX384-B75
BZX384-C2V4 to BZX384-C75
NAME −
PACKAGE DESCRIPTION plastic surface mounted package; 2 leads
VERSION SOD323
2004 Mar 22
3
NXP Semiconductors
Voltage regulator diodes
Product data sheet
BZX384 series
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL IF IZSM
PZSM
Ptot Tstg Tj
PARAMETER continuous forward current non-repetitive peak reverse current
non-repetitive peak reverse power dissipation total power dissipation storage temperature junction temperature
CONDITIONS
tp = 100 μs; square wave; Tamb = 25 °C; prior to surge tp = 100 μs; square wave; Tamb = 25 °C; prior to surge Tamb = 25 °C; note 1
MIN.
MAX.
− 250
see Tables 1 and 2
− 40
− 300 −65 +150 −65 +150
UNIT mA A
W
mW °C °C
Note 1. Refer to SOD323 standard mounting conditions.
CHARACTERISTICS
Total BZX384-B and C series Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF forward voltage
IR reverse current; BZX384-B/C2V4 BZX384-B/C2V7 BZX384-B/C3V0 BZX384-B/C3V3 BZX384-B/C3V6 BZX384-B/C3V9 BZX384-B/C4V3 BZX384-B/C4V7 BZX384-B/C5V1 BZX384-B/C5V6 BZX384-B/C6V2 BZX384-B/C6V8 BZX384-B/C7V5 BZX384-B/C8V2 BZX384-B/C9V1 BZX384-B/C10 BZX384-B/C11 BZX384-B/C12 BZX384-B/C13 BZX384-B/C15 to 75
CONDITIONS
IF = 10 mA; see Fig.3 IF = 100 mA; see Fig.3
VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 2 V VR = 2 V VR = 2 V VR = 4 V VR = 4 V VR = 5 V VR = 5 V VR = 6 V VR = 7 V VR = 8 V VR = 8 V VR = 8 V VR = 0.7VZnom
MAX. 0.9 1.1
UNIT V V
50 μA 20 μA 10 μA 5 μA 5 μA 3 μA 3 μA 3 μA 2 μA 1 μA 3 μA 2 μA 1 μA 700 nA 500 nA 200 nA 100 nA 100 nA 100 nA 50 nA
2004 Mar 22
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NXP Semiconductors
Voltage regulator diodes
2004 Mar 22
Table 1 Per type BZX384-B/C2V4 to B/C24 Tj = 25 °C unless otherwise specified.
BZXBxxx Cxxx
WORKING VOLTAGE VZ (V) at IZtest = 5 mA
Tol. ±2% (B) Tol. ±5% (C)
DIFFERENTIAL RESISTANCE rdif (Ω)
at IZtest = 1 mA at IZtest = 5 mA
TEMPERATURE
COEFFICIENT SZ (mV/K) at IZtest = 5 mA
(see Figs 4 and 5)
DIODE CAP. Cd (pF)
at f = 1 MHz; VR = 0 V
NON-REPETITIVE
PEAK REVERSE
CURRENT IZSM (A) at tp = 100 μs; Tamb = 25 °C
MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX.
MAX.
MAX.
5
2V4 2.35 2.45 2.2 2.6 275 600 70
2V7 2.65 2.75 2.5 2.9 300 600 75
3V0 2.94 3.06 2.8 3.2 325 600 80
3V3 3.23 3.37 3.1 3.5 350 600 85
3V6 3.53 3.67 3.4 3.8 375 600 85
3V9 3.82 3.98 3.7 4.1 400 600 85
4V3 4.21 4.39 4.0 4.6 410 600 80
4V7 4.61 4.79 4.4 5.0 425 500 50
5V1 5.00 5.20 4.8 5.4 400 480 40
5V6 5.49 5.71 5.2 6.0 80
400 15
6V2 6.08 6.32 5.8 6.6 40
150 6
6V8 6.66 6.94 6.4 7.2 30 80 6
7V5 7.35 7.65 7.0 7.9 30 8.