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VS-16TTS08S-M3, VS-16TTS12S-M3 Series
Vishay Semiconductors
Thyristor High Voltage, Surface Mount Phase Control SCR, 16 A
2, 4 Anode
2 1
3 D2PAK (TO-263AB)
13 Cathode Gate
PRIMARY CHARACTERISTICS
IT(AV) VDRM/VRRM
VTM IGT TJ Package
10 A 800 V, 1200 V
1.4 V 60 mA -40 °C to 125 °C D2PAK (TO-263AB)
Circuit configuration
Single SCR
FEATURES
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
• Designed and JEDEC®-JESD 47
qualified
according
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS • Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which are available in identical package outlines
DESCRIPTION
The VS-16TTS..S-M3 high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
NEMA FR-4 or G-10 glass fabric-based epoxy 2.5
with 4 oz. (140 μm) copper
Aluminum IMS, RthCA = 15 °C/W Aluminum IMS with heatsink, RthCA = 5 °C/W
6.3 14.0
Note • TA = 55 °C, TJ = 125 °C, footprint 300 mm2
THREE-PHASE BRIDGE 3.5 9.5 18.5
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV) IRMS VRRM/VDRM ITSM VT dV/dt
Sinusoidal waveform 10 A, TJ = 25 °C
dI/dt
TJ
VALUES 10 16
800 to 1200 200 1.4 500 150
-40 to +125
VOLTAGE RATINGS
PART NUMBER
VS-16TTS08S-M3 VS-16TTS12S-M3
VRRM, MAXIMUM PEAK REVERSE VOLTAGE V
800
1200
VDRM, MAXIMUM PEAK DIRECT VOLTAGE V
800
1200
UNITS
A
UNITS A V A V
V/μs A/μs °C
IRRM/IDRM AT 125 °C
mA 10
Revision: 29-Jun-2020
1
Document Number: 96412
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-16TTS08S-M3, VS-16TTS12S-M3 Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average on-state current Maximum RMS on-state current Maximum peak, one-cycle, non-repetitive surge current
Maximum I2t for fusing
Maximum I2t for fusing Maximum on-state voltage drop On-state slope resistance Threshold voltage
Maximum reverse and direct leakage current
IT(AV) IRMS
ITSM
I2t
I2t VTM
rt VT(TO)
IRM/IDM
Holding current
Maximum latching current Maximum rate of rise of off-state voltage Maximum rate of rise of turned-on current
IH
IL dV/dt dI/dt
TC = 98 °C, 180° conduction, half sine wave
10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied 10 A, TJ = 25 °C
TJ = 125 °C
TJ = 25 °C VR = rated VRRM/VDRM TJ = 125 °C Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C Anode supply = 6 V, resistive load,TJ = 25 °C TJ = TJ max. linear to 80 % VDRM = Rg - k = open
VALUES UNITS
TYP. MAX.
10
16 A
170
200
144
A2s
200
2000
A2s
1.4
V
24.0
m
1.1
V
0.5
10 mA
- 150
200
500
V/μs
150
A/μs
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak negative gate voltage
SYMBOL PGM PG(AV) + IGM - VGM
Maximum required DC gate current to trigger
IGT
Maximum required DC gate voltage to trigger
VGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
TEST CONDITIONS
Anode supply = 6 V, resistive load, TJ = - 10 °C Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C Anode supply = 6 V, resistive load, TJ = - 10 °C Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C TJ = 125 °C, VDRM = Rated value
VALUES 8.0 2.0 1.5 10 90 60 35 3.0 2.0 1.0 0.25 2.0
UNITS W A V mA
V
mA
SWITCHING
PARAMETER Typical turn-on time Typical reverse recovery time Typical turn-off time
SYMBOL tgt trr tq
TJ = 25 °C TJ = 125 °C
TEST CONDITIONS
VALUES 0.9 4 110
UNITS μs
Revision: 29-Jun-2020
2
Document Number: 96412
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-16TTS08S-M3, VS-16TTS12S-M3 Series
Vishay Semiconductors
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range
TJ, TStg
Maximum thermal resistance, junction to case
RthJC
DC operation
Typical thermal resistance, junction to ambient
.