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VS-16TTS08STRL-M3 Dataheets PDF



Part Number VS-16TTS08STRL-M3
Manufacturers Vishay
Logo Vishay
Description Thyristor High Voltage / Surface Mount Phase Control SCR
Datasheet VS-16TTS08STRL-M3 DatasheetVS-16TTS08STRL-M3 Datasheet (PDF)

www.vishay.com VS-16TTS08S-M3, VS-16TTS12S-M3 Series Vishay Semiconductors Thyristor High Voltage, Surface Mount Phase Control SCR, 16 A 2, 4 Anode 2 1 3 D2PAK (TO-263AB) 13 Cathode Gate PRIMARY CHARACTERISTICS IT(AV) VDRM/VRRM VTM IGT TJ Package 10 A 800 V, 1200 V 1.4 V 60 mA -40 °C to 125 °C D2PAK (TO-263AB) Circuit configuration Single SCR FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Designed and JEDEC®-JESD 47 qualified according • Material categor.

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www.vishay.com VS-16TTS08S-M3, VS-16TTS12S-M3 Series Vishay Semiconductors Thyristor High Voltage, Surface Mount Phase Control SCR, 16 A 2, 4 Anode 2 1 3 D2PAK (TO-263AB) 13 Cathode Gate PRIMARY CHARACTERISTICS IT(AV) VDRM/VRRM VTM IGT TJ Package 10 A 800 V, 1200 V 1.4 V 60 mA -40 °C to 125 °C D2PAK (TO-263AB) Circuit configuration Single SCR FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Designed and JEDEC®-JESD 47 qualified according • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Input rectification (soft start) • Vishay input diodes, switches and output rectifiers which are available in identical package outlines DESCRIPTION The VS-16TTS..S-M3 high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE NEMA FR-4 or G-10 glass fabric-based epoxy 2.5 with 4 oz. (140 μm) copper Aluminum IMS, RthCA = 15 °C/W Aluminum IMS with heatsink, RthCA = 5 °C/W 6.3 14.0 Note • TA = 55 °C, TJ = 125 °C, footprint 300 mm2 THREE-PHASE BRIDGE 3.5 9.5 18.5 MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) IRMS VRRM/VDRM ITSM VT dV/dt Sinusoidal waveform 10 A, TJ = 25 °C dI/dt TJ VALUES 10 16 800 to 1200 200 1.4 500 150 -40 to +125 VOLTAGE RATINGS PART NUMBER VS-16TTS08S-M3 VS-16TTS12S-M3 VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 800 1200 VDRM, MAXIMUM PEAK DIRECT VOLTAGE V 800 1200 UNITS A UNITS A V A V V/μs A/μs °C IRRM/IDRM AT 125 °C mA 10 Revision: 29-Jun-2020 1 Document Number: 96412 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-16TTS08S-M3, VS-16TTS12S-M3 Series Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS Maximum average on-state current Maximum RMS on-state current Maximum peak, one-cycle,  non-repetitive surge current Maximum I2t for fusing Maximum I2t for fusing Maximum on-state voltage drop On-state slope resistance Threshold voltage Maximum reverse and direct leakage current IT(AV) IRMS ITSM I2t I2t VTM rt VT(TO) IRM/IDM Holding current Maximum latching current Maximum rate of rise of off-state voltage Maximum rate of rise of turned-on current IH IL dV/dt dI/dt TC = 98 °C, 180° conduction, half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied 10 A, TJ = 25 °C TJ = 125 °C TJ = 25 °C VR = rated VRRM/VDRM TJ = 125 °C Anode supply = 6 V, resistive load, initial IT = 1 A,  TJ = 25 °C Anode supply = 6 V, resistive load,TJ = 25 °C TJ = TJ max. linear to 80 % VDRM = Rg - k = open VALUES UNITS TYP. MAX. 10 16 A 170 200 144 A2s 200 2000 A2s 1.4 V 24.0 m 1.1 V 0.5 10 mA - 150 200 500 V/μs 150 A/μs TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) + IGM - VGM Maximum required DC gate current to trigger IGT Maximum required DC gate voltage to trigger VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD TEST CONDITIONS Anode supply = 6 V, resistive load, TJ = - 10 °C Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C Anode supply = 6 V, resistive load, TJ = - 10 °C Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C TJ = 125 °C, VDRM = Rated value VALUES 8.0 2.0 1.5 10 90 60 35 3.0 2.0 1.0 0.25 2.0 UNITS W A V mA V mA SWITCHING PARAMETER Typical turn-on time Typical reverse recovery time Typical turn-off time SYMBOL tgt trr tq TJ = 25 °C TJ = 125 °C TEST CONDITIONS VALUES 0.9 4 110 UNITS μs Revision: 29-Jun-2020 2 Document Number: 96412 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-16TTS08S-M3, VS-16TTS12S-M3 Series Vishay Semiconductors THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance,  junction to case RthJC DC operation Typical thermal resistance,  junction to ambient .


VS-16TTS08STRR-M3 VS-16TTS08STRL-M3 VS-16TTS12STRR-M3


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