IPI50R380CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS™ CE Power Transistor IPx50R380CE Data Sheet Rev. 2.0, 2010-08-27 Final Industrial & Multimarket 500V CoolMOS™ CE Power Transistor IPP50R380CE, IPA50R380CE IPI50R380CE 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ CE series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. drain pin 2 gate pin 1 source pin 3 Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt 550 0.38 32 30 2.8 500 V  nC A µJ A/µs Type / Ordering Code IPP50R380CE IPA50R380CE IPI50R380CE Package PG-TO220 PG-TO220 ...