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GT60M303

Part Number	GT60M303
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel IGBT
Published	Mar 23, 2005
Detailed Description	GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS U...
Datasheet	GT60M303 PDF File

Overview

GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.
25μs (TYP.
) FRD : trr = 0.
7μs (TYP.
) z Low saturation voltage : VCE (sat) = 2.
1V (TYP.
) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage Gate−Emitter Voltage Collector Current DC 1ms Emitter−Collector Foward Current DC 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Screw Torque VCES VGES IC ICP IECF IECFP PC Tj Tstg ― 900 ±25 60 120 15 120...

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