Document
E2O0018-27-X2
¡ Semiconductor¡ Semiconductor
MThSiMs v8e2rCsi5o3n-:2JRaSn/. G19S9/8JS Previous version: Aug. 1996
MSM82C53-2RS/GS/JS
CMOS PROGRAMMABLE INTERVAL TIMER
GENERAL DESCRIPTION
The MSM82C53-2RS/GS/JS is programmable universal timers designed for use in microcomputer systems. Based on silicon gate CMOS technology, it requires a standby current of only 100 mA (max.) when the chip is in the nonselected state. During timer operation, power consumption is still very low only 8 mA (max.) at 8 MHz of current required. The device consists of three independent counters, and can count up to a maximum of 8 MHz (MSM82C53-2). The timer features six different counter modes, and binary count/BCD count functions. Count values can be set in byte or word units, and all functions are freely programmable.
FEATURES
• Maximum operating frequency of 8 MHz (MSM82C53-2) • High speed and low power consumption achieved through silicon gate CMOS technology • Completely static operation • Three independent 16-bit down-counters • 3 V to 6 V single power supply • Six counter modes available for each counter • Binary and decimal counting possible • 24-pin Plastic DIP (DIP24-P-600-2.54): (Product name: MSM82C53-2RS) • 28-pin Plastic QFJ (QFJ28-P-S450-1.27): (Product name: MSM82C53-2JS) • 32-pin Plastic SSOP(SSOP32-P-430-1.00-K): (Product name: MSM82C53-2GS-K)
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¡ Semiconductor FUNCTIONAL BLOCK DIAGRAM
VCC GND
8 Data
D7 - D0
Bus
Buffer
WR RD Read/
Write A0 Logic
A1
CS
8
Control Word Register
MSM82C53-2RS/GS/JS
Counter #0
CLK0 GATE0 OUT0
Counter #1
CLK1 GATE1 OUT1
Counter #2
CLK2 GATE2 OUT2
Internal Bus
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¡ Semiconductor
PIN CONFIGURATION (TOP VIEW)
24 pin Plastic DIP
D7 1 D6 2 D5 3 D4 4 D3 5 D2 6 D1 7 D0 8 CLK0 9 OUT0 10 GATE0 11 GND 12
32 pin Plastic SSOP
NC D7 D6 D5 NC D4 D3 D2 D1 D0 CLK0 NC
OUT0 GATE0
GND
NC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
28 pin Plastic QFJ
D4 5 D3 6 D2 7 D1 8 D0 9 CLK0 10 NC 11
OUT0 12 GATE0 13
GND 14 NC 15
OUT1 16 GATE1 17
CLK1 18
4 D5 3 D6 2 D7 1 NC 28 VCC 27 WR 26 RD
MSM82C53-2RS/GS/JS
24 Vcc 23 WR 22 RD 21 CS 20 A1 19 A0 18 CLK2 17 OUT2 16 GATE2 15 CLK1 14 GATE1 13 OUT1
32 NC 31 Vcc 30 WR 29 RD 28 NC 27 CS 26 A1 25 A0 24 CLK2 23 OUT2 22 GATE2 21 NC 20 CLK1 19 GATE1 18 OUT1 17 NC
(NC denotes "not connected")
25 NC 24 CS 23 A1 22 A0 21 CLK2 20 OUT2 19 GATE2
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¡ Semiconductor
MSM82C53-2RS/GS/JS
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage Input Voltage Output Voltage Storage Temperature Power Dissipation
Symbol
VCC VIN VOUT TSTG PD
Condition
Respect to GND
— Ta = 25°C
Rating
MSM82C53-2RS MSM82C53-2GS MSM82C53-2JS
–0.5 to + 7
–0.5 to VCC + 0.5 –0.5 to VCC + 0.5
–55 to + 150
0.9 0.7
0.9
Units
V V V °C W
OPERATING RANGES
Parameter Supply Voltage Operating Temperature
Symbol VCC Top
Condition
VIL = 0.2 V, VIH = VCC -0.2 V, Operating Frequency 2.6 MHz
Range 3 to 6 –40 to +85
Unit V °C
RECOMMENDED OPERATING CONDITIONS
Parameter Supply Voltage Operating Temperature "L" Input Voltage "H" Input Voltage
Symbol
VCC Top VIL VIH
Min. 4.5 –40 –0.3 2.2
Typ. 5 +25 — —
Max. 5.5 +85 +0.8
VCC + 0.3
Unit V °C V V
DC CHARACTERISTICS
Parameter "L" Output Voltage "H" Output Voltage Input Leak Current Output Leak Current
Standby Supply Current
Operating Supply Current
Symbol VOL VOH ILI ILO
ICCS
ICC
Condition
IOL = 4 mA
IOH = –1 mA
0 £ VIN £ VCC
0 £ VOUT £ VCC
CS ≥ VCC - 0.2 V VIH ≥ VCC - 0.2 V VIL £ 0.2 V
tCLK = 125 ns CL = 0 pF
VCC = 4.5 V to 5.5 V Ta = –40°C to +85°C
Min. — 3.7 –10 –10
Typ. Max. Unit — 0.45 V —— V — 10 mA — 10 mA
— — 100 mA
— — 8 mA
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¡ Semiconductor
MSM82C53-2RS/GS/JS
AC CHARACTERISTICS
(VCC = 4.5 V to 5.5 V, Ta = –40 to +85°C)
Parameter
Address Set-up Time before Reading Address Hold Time after Reading Read Pulse Width Read Recovery Time Address Set-up Time before Writing Address Hold Time after Writing Write Pulse Width Data Input Set-up Time before Writing Data Input Hold Time after Writing Write Recovery Time Clock Cycle Time Clock "H" Pulse Width Clock "L" Pusle Width "H" Gate Pulse Width "L" Gate PUlse Width Gate Input Set-up Time before Clock Gate Input Hold Time after Clock Output Delay Time after Reading Output Floating Delay Time after Reading Output Delay Time after Gate Output Delay Time after Clock Output Delay Time after Address
Symbol
tAR tRA tRR tRVR tAW tWA tWW tDW tWD tRVW tCLK tPWH tPWL tGW tGL tGS tGH tRD
tDF
tODG tOD tAD
MSM82C53-2
Min. 30 0 150 200 0 20 150 100 20 200 125 60 60 50 50 50 50 —
Max. — — — — — — — — — — D.C. — — — — — — 120
5 90
— 120 — 150 — 180
Unit Condition
ns ns Read ns Cycle ns ns ns ns Write ns Cycle ns ns ns CL = 150 pF ns ns Clock ns and ns Gate ns Timing ns ns
ns
ns Delay ns Time ns
Note: Timing measured at VL = 0.8 V and VH = 2.2 V for both inputs and outputs.
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¡ Semiconductor TIMING CHART WriteTiming
A0 - 1 CS
D0 - 7
WR
MSM82C53-2RS/GS/JS
tAW tWA
tDW tWW
tWD
Read Timing A0 - 7, CS RD D0 - 7
tAR tRR
tRA
tAD tRD
tDF
High Impedance
Valid
Hig.