GT5G131
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT5G131
Strobe Flash Applications
Unit: mm 3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A) Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode Peak collector current: IC = 130 A (max)
M...
