IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max...
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
500 VGS = 10 V
39
Qgs (nC)
10
Qgd (nC)
19
Configuration
Single
0.85
I2PAK (TO-262)
D2PAK (TO-263)
D
G
DS G
D S
G
S N-Channel MOSFET
FEATURES Halogen-free According to IEC 61249-2-21
Definition
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30 V VGS Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation
Repetitive Avalanche Rated
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs. These device improvements combined with the proven ruggedness and reliability that characterize Power MOSFETs offer the designer a new power
transistor standard for switching applications.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note a. See device orientation.
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