IRF840LCL

IRF840LCS/LCL Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A D N Channel G Symbol S ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise Parameter Symbol Test Conditions Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current Gate Threshold Voltage V(BR)DSS VGS = 0 VDC, ID = 250µA IDSS VDS = 500VDC, VGS = 0VDC VDS = 400VDC, VGS = 0VDC Tj=125 C IGSS VGS = +20VDC VGS = -20VDC VGS(th) VDS = VGS, ID = 250µA Static Drain to Source On - Resistance RDS(on) VGS= 10VDC, ID = 4.8A Gate Charge Gate to Source Charge Gate to Drain Charge Input Capacitance Output Capacitance Transfer Capacitance Turn On Delay Time Turn Off Delay Time Rise Time Fall Time Continuous Source Current Pulsed Source Current Forward Voltage (Diode) Single Pulse Avalanche Energy QG QGS QGD CISS COSS CRSS td(on) td(off) tr ID = 8.0A VDS = 400VDC, VGS = 10VDC VDS = 25VDC, VGS= 0VDC, f = 1.0MHZ VDD = 250VDC, ID = 8.0A, RG = 9.1 RD = 31 tf IS ISM VSD VGS = 0VDC, IS =8.0A, Tp = 300µS EAS Value Min Typ 500 ----2.0 - -- ---- 1100 - 170 - 18 - 12 - 27 - 25 - 19 ---- Max Unit - Volt 25 250 µA 100 -100 4.0 nA nA Volt 0.85 39 nC 10 nC 19 nC - pF - pF - pF - nS - nS - nS - nS 8.0 A 28 A 2.0 V 510 mj MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Parameter Symbol Condition Gate to Source Voltage VGS Drain to Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissapation Thermal Resistance (Junction to ...