Power MOSFET
IRF840LCS/LCL
Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A
D
N Channel
G Symbol S
ELECTRICAL CHARACTERISI...
Description
IRF840LCS/LCL
Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A
D
N Channel
G Symbol S
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter
Symbol
Test Conditions
Drain to Source Breakdown Voltage Drain to Source Leakage Current
Gate to Source Leakage Current Gate Threshold Voltage
V(BR)DSS VGS = 0 VDC, ID = 250µA
IDSS
VDS = 500VDC, VGS = 0VDC VDS = 400VDC, VGS = 0VDC Tj=125 C
IGSS VGS = +20VDC VGS = -20VDC
VGS(th) VDS = VGS, ID = 250µA
Static Drain to Source On - Resistance RDS(on) VGS= 10VDC, ID = 4.8A
Gate Charge Gate to Source Charge Gate to Drain Charge
Input Capacitance Output Capacitance Transfer Capacitance
Turn On Delay Time Turn Off Delay Time Rise Time Fall Time Continuous Source Current Pulsed Source Current Forward Voltage (Diode) Single Pulse Avalanche Energy
QG QGS QGD CISS COSS CRSS td(on) td(off) tr
ID = 8.0A VDS = 400VDC, VGS = 10VDC VDS = 25VDC, VGS= 0VDC, f = 1.0MHZ
VDD = 250VDC, ID = 8.0A, RG = 9.1 RD = 31
tf
IS ISM VSD VGS = 0VDC, IS =8.0A, Tp = 300µS EAS
Value
Min Typ
500 ----2.0 -
--
---- 1100 - 170 - 18 - 12 - 27 - 25 - 19
----
Max Unit
- Volt
25 250 µA
100 -100
4.0
nA nA Volt
0.85
39 nC 10 nC 19 nC
- pF - pF - pF - nS - nS - nS - nS
8.0 A
28 A 2.0 V
510 mj
MAXIMUM RATINGS (Tj = 25 C unless stated otherwise)
Parameter
Symbol Condition
Gate to Source Voltage
VGS
Drain to Source Voltage Continuous Drain Current
Pulsed Drain Current Total Power Dissapation Thermal Resistance
(Junction to ...
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