GT50J322
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT50J322
FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
Unit: mm
z FRD included between emitter and collector
z Enhancement mode type
z High speed
: tf = 0.25μs (Typ.) (IC = 50A)
z Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A)
ABSOLUTE MA...
