GT50G321

GT50G321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50G321 The 4th Generation Current Resonance Inverter Switching Applications Unit: mm · FRD included between emitter and collector · Enhancement-mode · High speed: tf = 0.30 µs (typ.) (IC = 60 A) · Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms Emitter-collector foward current DC 1 ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 400 ±25 50 100 15 30 130 150 −55 to 150 Equivalent Circuit Unit V V A A W °C °C Collector Gate Emitter JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) 1 2002-12-11 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Forward voltage Turn-off time Reverse recovery time Thermal resistance (IGBT) Thermal resistance (FRD) Symbol Test Condition IGES ICES VGE (OFF) VCE (sat) Cies tr VGE = ±25 V, VCE = 0 VCE = 400 V, VGE = 0 IC = 60 mA, VCE = 5 V IC = 60 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz ton tf toff VF trr Rth (j-c) Rth (j-c) 15 V 0 39 Ω −15 V IF = 15 A, VGE = 0 IF = 15 A, VGE = 0 di/dt = −100 A/µs ― ― 200 V 3.33 Ω GT50G321...