GT40T101

GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 HIGH POWER SWITCHING APPLICATIONS Unit: mm l Enhancement−Mode l High Speed l Low Saturation : tf = 0.4 µs (Max.) (IC = 40 A) : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector−Emitter Voltage Gate−Emitter Voltage Collector Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range DC 1ms SYMBOL VCES VGES IC ICP PC Tj Tstg RATING 1500 ±25 40 80 200 150 −55~150 UNIT V V A W °C °C JEDEC JEITA TOSHIBA Weight: 9.75g ― ― 2−21F2C ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Gate Leakage Current Collector Cut−off Current Gate−Emitter Cut−off Voltage Collector−Emitter Saturation Voltage Input Capacitance Rise Time Switching Time Turn−On Time Fall Time Turn−Off Time Thermal Resistance SYMBOL TEST CONDITION IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff Rth (j−c) VGE = ±25 V, VCE = 0 VCE = 1500 V, VGE = 0 IC = 40 mA, VCE = 5 V IC = 40 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz ― MIN TYP. MAX UNIT ― ― ±500 nA ― ― 1.0 mA 3.0 ― 6.0 V ― 4.0 5.0 V ― 3600 ― pF ― 0.6 1.0 ― 0.7 1.1 µs ― 0.2 0.4 ― 0.5 1.0 ― ― 0.625 °C / W 1 2001-06-06 GT40T101 2 2001-06-06 GT40T101 3 2001-06-06 GT40T101 4 2001-06-06 GT40T101 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can...