GT40Q321
TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT
GT40Q321
Voltage Resonance Inverter Switchin...
GT40Q321
TOSHIBA Injection Enhanced Gate
Transistor Silicon N Channel IEGT
GT40Q321
Voltage Resonance Inverter Switching Application
· · · · · The 5th generation Enhancement-mode High speed : tf = 0.41 µs (typ.) (IC = 40A) Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A) FRD included between emitter and collector Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 ±25 23 42 80 10 80 68 170 150 −55 to 150 Unit V V A A A W W °C °C
JEDEC JEITA TOSHIBA
― ― 2-16C1C
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.74 1.79 Unit °C/W °C/W
Equivalent Circuit
Collector
Gate Emitter
1
2003-02-05
GT40Q321
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Diode forward voltage Reverse recovery time Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr IF = 10 A, VGE = 0 IF = 10 A, di/dt = −20 A/µs Test Condition VGE = ±25 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = ...