GT40M301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE
GT40M301
HIGH POWER SWITCHING APPLICATION...
GT40M301
TOSHIBA INSULATED GATE BIPOLAR
TRANSISTOR SILICON N CHANNEL MOS TYPE
GT40M301
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
l The 3rd Generation
l FRD Included Between Emitter and Collector
l Enhancement−Mode
l High Speed IGBT : tf = 0.25µs (TYP.) FRD : trr = 0.7µs (TYP.)
l Low Saturation Voltage : VCE (sat) = 3.4V (MAX.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Collector−Emitter Voltage Gate−Emitter Voltage
Collector Current
Emitter−Collector Foward Current
Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Screw Torque
DC 1ms DC 1ms
SYMBOL
VCES VGES
IC ICP IECF IECFP
PC
Tj Tstg ―
RATING
900 ±25 40 80 15 120
200
150 −55~150
0.8
EQUIVALENT CIRCUIT
UNIT
V V A A A A
W
°C °C N·m
JEDEC JEITA TOSHIBA
Weight: 9.75g
― ― 2−21F2C
1 2001-06-06
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Gate Leakage Current Collector Cut−off Current Gate-Emitter Cut−off Voltage Collector−Emitter Saturation Voltage Collector−Emitter Saturation Voltage
Input Capacitance
Rise Time
Switching Time
Turn−On Time Fall Time
Turn−Off Time
Emitter−Collector Forward Voltage
Reverse Recovery Time
Thermal Resistance Thermal Resistance
SYMBOL
TEST CONDITION
IGES ICES VGE (OFF) VCE (sat) (1) VCE (sat) (2)
Cies
VGE = ±25V, VCE = 0 VCE = 900V, VGE = 0 IC = 40mA, VCE = 5V IC = 8A, VGE = 15V IC = 40A, VGE = 15V VCE = 30V, VGE = 0 f = 1MHz
tr ton tf toff VECF
trr
IEC = 15A, VGE = 0 IF = 15A, VGE = 0, di / dt = −20A / µs
Rth (j−c) Rth (j−c...